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MUR1620CTN PDF预览

MUR1620CTN

更新时间: 2024-09-25 01:11:51
品牌 Logo 应用领域
THINKISEMI /
页数 文件大小 规格书
2页 363K
描述
16.0 Ampere Heatsink Dual Common Anode Ultra Fast Recovery Rectifiers

MUR1620CTN 数据手册

 浏览型号MUR1620CTN的Datasheet PDF文件第2页 
MUR1620CTN thru MUR1660CTN  
MUR1620CTN/MUR1640CTN/MUR1660CTN  
Pb Free Plating Product  
16.0 Ampere Heatsink Dual Common Anode Ultra Fast Recovery Rectifiers  
TO-220AB/TO-220-3L  
Unit : inch (mm)  
Features  
.419(10.66)  
.387(9.85)  
.196(5.00)  
.163(4.16)  
Fast switching for high efficiency  
Low forward voltage drop  
High current capability  
.139(3.55)  
MIN  
.054(1.39)  
.045(1.15)  
Low reverse leakage current  
High surge current capability  
Application  
Automotive Inverters and Solar Inverters  
Plating Power Supply,SMPS and UPS  
Car Audio Amplifiers and Sound Device Systems  
.038(0.96)  
.019(0.50)  
.025(0.65)MAX  
Mechanical Data  
Case: Heatsink TO-220AB open metal package  
Epoxy: UL 94V-0 rate flame retardant  
Terminals: Solderable per MIL-STD-202  
method 208  
Polarity: As marked on diode body  
Mounting position: Any  
.1(2.54)  
.1(2.54)  
Case  
Case  
Case  
Case  
Doubler  
Common Cathode Common Anode Tandem Polarity Tandem Polarity  
Suffix "CTD" Suffix "CTS"  
Series  
Negative  
Positive  
Weight: 2.2 gram approximately  
Suffix "CTG"  
Suffix "CTN"  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Rating at 25ambient temperature unless otherwise specified.  
Single phase, half wave, 60Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
UNIT  
SYMBOL  
MUR1620CTN MUR1640CTN MUR1660CTN  
V
V
V
Maximum Recurrent Peak Reverse Voltage  
Maximum RMS Voltage  
V
RRM  
RMS  
200  
140  
200  
400  
280  
400  
600  
420  
600  
V
Maximum DC Blocking Voltage  
V
DC  
Maximum Average Forward Rectified  
16.0  
175  
1.3  
A
A
V
IF(AV)  
(Total Device 2x8A=16A)  
Current TC  
=125  
Peak Forward Surge Current, 8.3ms single  
Half sine-wave superimposed on rated load  
(JEDEC method)  
I
FSM  
Maximum Instantaneous Forward Voltage  
V
F
0.98  
1.7  
@ 8.0 A (Per Diode/Per Leg)  
5.0  
100  
μA  
μA  
J
=25  
Maximum DC Reverse Current @T  
At Rated DC Blocking Voltage @T  
I
R
J
=125  
nS  
pF  
Maximum Reverse Recovery Time (Note 1)  
Typical junction Capacitance (Note 2)  
Typical Thermal Resistance (Note 3)  
Trr  
35  
90  
C
J
R
JC  
1.5  
/W  
Operating Junction and Storage  
Temperature Range  
-55 to + 150  
T , TSTG  
J
NOTES : (1) Reverse recovery test conditions IF= 0.5A, IR= 1.0A, Irr = 0.25A.  
(2) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC.  
(3) Thermal Resistance junction to case.  
Page 1/2  
http://www.thinkisemi.com.tw/  
Rev.10T  
© 1995 Thinki Semiconductor Co., Ltd.  

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