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MUR1620CTPBF

更新时间： 2024-09-24 10:41:59
品牌 Logo 应用领域
威世 - VISHAY 整流二极管局域网超快恢复二极管快速恢复二极管
页数 文件大小 规格书
8页 151K
描述
Ultrafast Rectifier, 2 x 8 A FRED Pt

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中文翻译

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MUR1620CTPBF 技术参数

是否无铅：不含铅是否Rohs认证：符合
生命周期：Obsolete零件包装代码：TO-220AB
包装说明：R-PSFM-T3针数：3
Reach Compliance Code：compliantHTS代码：8541.10.00.80
风险等级：8.17Is Samacsys：N
其他特性：FREE WHEELING DIODE, LOW LEAKAGE CURRENT应用：ULTRA FAST RECOVERY HIGH POWER
外壳连接：CATHODE配置：COMMON CATHODE, 2 ELEMENTS
二极管元件材料：SILICON二极管类型：RECTIFIER DIODE
最大正向电压 (VF)：0.895 VJEDEC-95代码：TO-220AB
JESD-30 代码：R-PSFM-T3JESD-609代码：e3
最大非重复峰值正向电流：100 A元件数量：2
相数：1端子数量：3
最高工作温度：175 °C最低工作温度：-65 °C
最大输出电流：8 A封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：FLANGE MOUNT
峰值回流温度（摄氏度）：NOT APPLICABLE认证状态：Not Qualified
最大重复峰值反向电压：200 V最大反向恢复时间：0.035 µs
子类别：Rectifier Diodes表面贴装：NO
端子面层：MATTE TIN端子形式：THROUGH-HOLE
端子位置：SINGLE处于峰值回流温度下的最长时间：NOT APPLICABLE
Base Number Matches：1

MUR1620CTPBF 数据手册

 浏览型号MUR1620CTPBF的Datasheet PDF文件第2页浏览型号MUR1620CTPBF的Datasheet PDF文件第3页浏览型号MUR1620CTPBF的Datasheet PDF文件第4页浏览型号MUR1620CTPBF的Datasheet PDF文件第5页浏览型号MUR1620CTPBF的Datasheet PDF文件第6页浏览型号MUR1620CTPBF的Datasheet PDF文件第7页 
VS-MUR1620CTPbF  
Vishay Semiconductors  
Ultrafast Rectifier, 2 x 8 A FRED Pt®  
FEATURES  
Base  
common  
cathode  
2
• Ultrafast recovery time  
• Low forward voltage drop  
• 175 °C operating junction temperature  
• Low leakage current  
• Compliant to RoHS Directive 2002/95/EC  
• Designed and qualified for industrial level  
2
Common  
cathode  
TO-220AB  
Anode  
Anode  
1
3
DESCRIPTION/APPLICATIONS  
VS-MUR1620CTPbF is the state of the art ultrafast recovery  
rectifier specifically designed with optimized performance of  
forward voltage drop and ultrafast recovery time.  
PRODUCT SUMMARY  
The planar structure and the platinum doped life time  
control, guarantee the best overall performance,  
ruggedness and reliability characteristics.  
Package  
TO-220AB  
2 x 8 A  
IF(AV)  
VR  
200 V  
These devices are intended for use in the output rectification  
stage of SMPS, UPS, DC/DC converters as well as  
freewheeling diode in low voltage inverters and chopper  
motor drives.  
VF at IF  
0.975 V  
t
rr typ.  
See Recovery table  
175 °C  
TJ max.  
Diode variation  
Common cathode  
Their extremely optimized stored charge and low recovery  
current minimize the switching losses and reduce over  
dissipation in the switching element and snubbers.  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
MAX.  
200  
UNITS  
Peak repetitive reverse voltage  
VRRM  
V
per leg  
total device  
8.0  
Average rectified forward current  
IF(AV)  
Rated VR, TC = 150 °C  
16  
A
Non-repetitive peak surge current per leg  
Peak repetitive forward current per leg  
Operating junction and storage temperatures  
IFSM  
IFM  
100  
Rated VR, square wave, 20 kHz, TC = 150 °C  
16  
TJ, TStg  
- 65 to 175  
°C  
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
MIN.  
TYP.  
MAX.  
UNITS  
Breakdown voltage,  
blocking voltage  
VBR  
VR  
,
IR = 100 μA  
IF = 8 A  
200  
-
-
V
-
-
-
-
-
-
-
-
0.975  
Forward voltage  
VF  
IR  
IF = 8 A, TJ = 150 °C  
0.895  
VR = VR rated  
-
5
250  
-
Reverse leakage current  
μA  
TJ = 150 °C, VR = VR rated  
VR = 200 V  
-
Junction capacitance  
Series inductance  
CT  
LS  
25  
8.0  
pF  
nH  
Measured lead to lead 5 mm from package body  
-
Document Number: 94078  
Revision: 28-Apr-11  
For technical questions within your region, please contact one of the following:  
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
www.vishay.com  
1
This datasheet is subject to change without notice.  
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
12345678

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