是否Rohs认证: | 符合 | 生命周期: | Obsolete |
包装说明: | LEAD FREE, CASE 369C-01, DPAK-3 | 针数: | 3 |
Reach Compliance Code: | not_compliant | ECCN代码: | EAR99 |
风险等级: | 5.32 | Is Samacsys: | N |
其他特性: | AVALANCHE RATED | 雪崩能效等级(Eas): | 200 mJ |
外壳连接: | DRAIN | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 30 V | 最大漏极电流 (Abs) (ID): | 20 A |
最大漏极电流 (ID): | 20 A | 最大漏源导通电阻: | 0.04 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-30 代码: | R-PSSO-G2 |
JESD-609代码: | e3 | 湿度敏感等级: | 1 |
元件数量: | 1 | 端子数量: | 2 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | 260 |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 74 W |
最大脉冲漏极电流 (IDM): | 60 A | 认证状态: | Not Qualified |
子类别: | FET General Purpose Power | 表面贴装: | YES |
端子面层: | Tin (Sn) | 端子形式: | GULL WING |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | 40 |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
MTD20N03HDL1 | ONSEMI |
获取价格 |
20A, 30V, 0.04ohm, N-CHANNEL, Si, POWER, MOSFET, CASE 369D-01, DPAK-3 | |
MTD20N03HDLG | ONSEMI |
获取价格 |
20A, 30V, 0.04ohm, N-CHANNEL, Si, POWER, MOSFET, LEAD FREE, CASE 369C-01, DPAK-3 | |
MTD20N03HDLT4 | ONSEMI |
获取价格 |
20A, 30V, 0.04ohm, N-CHANNEL, Si, POWER, MOSFET, CASE 369C-01, DPAK-3 | |
MTD20N03HDLT4 | MOTOROLA |
获取价格 |
20A, 30V, 0.04ohm, N-CHANNEL, Si, POWER, MOSFET, DPAK-3 | |
MTD20N03HDLT4G | ONSEMI |
获取价格 |
20A, 30V, 0.04ohm, N-CHANNEL, Si, POWER, MOSFET, LEAD FREE, CASE 369C-01, DPAK-3 | |
MTD20N03HL | MOTOROLA |
获取价格 |
HDTMOS E-FET High Density Power FET DPAK for Surface Mount | |
MTD20N06 | MOTOROLA |
获取价格 |
TMOS POWER FET 20 AMPERES 60 VOLTS RDS(on) = 0.080 OHM | |
MTD20N06HD | MOTOROLA |
获取价格 |
TMOS POWER FET 20 AMPERES 60 VOLTS RDS(on) = 0.045 OHM | |
MTD20N06HD | ONSEMI |
获取价格 |
Power MOSFET 20 Amps, 60 Volts N−Channel DPAK | |
MTD20N06HD-1 | ONSEMI |
获取价格 |
Power MOSFET 20 Amps, 60 Volts N−Channel DPAK |