Datasheet > MT58L128V36P1T-6IT

MT58L128V36P1T-6IT

更新时间： 2023-06-15 00:00:00

品牌	Logo	应用领域
赛普拉斯 - CYPRESS		静态存储器
页数	文件大小	规格书
27页	447K
描述
Cache SRAM, 128KX36, 3.5ns, CMOS, PQFP100, PLASTIC, MS-026BHA, TQFP-100

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MT58L128V36P1T-6IT 数据手册

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PRELIMINARY

4Mb : 256K x 18, 128K x 32/36

PIPELINED, SCD SYNCBURST SRAM

119-PINBGA

22.00 ±0.20

19.94 ±0.10

Substrate material:

BT resin laminate

0.60 ±0.10

0.90 ±0.10

14.00 ±0.10

11.94 ±0.10

0.15

2.40 MAX

SEATING PLANE

A1 CORNER

(dimension applies to a

noncollapsed solder ball)

0.75 ±0.15

1.27 (TYP)

7.62

1.27 (TYP)

20.32

MAX

NOTE: 1. All dimensions in millimeters

or typical where noted.

MIN

2. Package width and length do not include mold protrusion; allowable mold protrusion is 0.25mm per side.

3. Solder ball land pad is 0.6mm.

8000 S. Fe d e ra l Wa y, P.O. Bo x 6, Bo ise , ID 83707-0006, Te l: 208-368-3900

E-m a il: p ro d m kt g @m icro n .co m , In t e rn e t : h t t p ://w w w .m icro n .co m , Cu st o m e r Co m m e n t Lin e : 800-932-4992

Micron is a registered trademark and SyncBurst is a trademark of Micron Technology, Inc.

Pentium is a registered trademark of Intel Corporation.

4Mb: 256K x 18, 128K x 32/36 Pipelined, SCD SyncBurst SRAM

MT58L256L18P1.p65 – Rev. 3/00

Micron Technology, Inc., reserves the right to change products or specifications without notice.

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