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MT58L128V36P1T-10IT PDF预览

MT58L128V36P1T-10IT

更新时间: 2024-02-23 14:13:00
品牌 Logo 应用领域
赛普拉斯 - CYPRESS 静态存储器
页数 文件大小 规格书
27页 447K
描述
Standard SRAM, 128KX36, 5ns, CMOS, PQFP100, PLASTIC, MS-026BHA, TQFP-100

MT58L128V36P1T-10IT 数据手册

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PRELIMINARY  
4Mb : 256K x 18, 128K x 32/36  
PIPELINED, SCD SYNCBURST SRAM  
GENERAL DESCRIPTION (co n t in u e d )  
pan sion (CE2, CE2#), burst con trol in puts (ADSC#,  
ADSP#, ADV#), byte write en ables (BWx#) an d global  
write (GW#).  
Asyn ch ron ous in puts in clude th e output en able  
(OE#), clock (CLK) an d sn ooze en able (ZZ). Th ere is also  
a burst m ode in put (MODE) th at selects between in ter-  
leaved an d lin ear burst m odes. Th e data-out (Q), en -  
abled by OE#, is also asyn ch ron ous. WRITE cycles can  
be from on e to two bytes wide (x18) or from on e to four  
bytes wide (x32/x36), as con trolled by th e write con trol  
in puts.  
an d DQPb. Durin g WRITE cycles on th e x32 an d x36  
devices, BWa# con trols DQas an d DQPa; BWb# con -  
trols DQbs an d DQPb; BWc# con trols DQcs an d DQPc;  
BWd# con trols DQds an d DQPd. GW# LOW causes all  
bytes to be written . Parity bits are on ly available on th e  
x18 an d x36 version s.  
Th is device in corporates a sin gle-cycle deselect fea-  
ture durin g READ cycles. If th e device is im m ediately  
deselected after a READ cycle, th e output bus goes to a  
t
High -Z state KQHZ n an osecon ds after th e risin g edge  
of clock.  
Burst operation can be in itiated with eith er address  
status processor (ADSP#) or address status con troller  
(ADSC#) in puts. Subsequen t burst addresses can be  
in tern ally gen erated as con trolled by th e burst advan ce  
in put (ADV#).  
Address an d write con trol are registered on -ch ip to  
sim plify WRITE cycles. Th is allows self-tim ed WRITE  
cycles. In dividual byte en ables allow in dividual bytes  
to be written . Durin g WRITE cycles on th e x18 device,  
BWa# con trols DQas an d DQPa; BWb# con trols DQbs  
Micron s 4Mb Syn cBurst SRAMs operate from a  
+3.3V VDD power supply, an d all in puts an d outputs are  
TTL-com patible. Users can ch oose eith er a 3.3V or 2.5V  
I/O version . Th e device is ideally suited for Pen tium an d  
PowerPC pipelin ed system s an d system s th at ben efit  
from a very wide, h igh -speed data bus. Th e device is also  
ideal in gen eric 16-, 18-, 32-, 36-, 64- an d 72-bit-wide  
application s.  
Please refer to Micron s Web site (www.m icron .com /  
m ti/m sp/h tm l/sram prod.h tm l) for th e latest data sh eet.  
TQFP PIN ASSIGNMENT TABLE  
PIN #  
1
2
3
4
5
6
7
8
x18  
NC  
NC  
NC  
x32/x36  
NC/DQPc*  
DQc  
PIN #  
26  
27  
28  
29  
30  
31  
32  
33  
34  
35  
36  
37  
38  
39  
40  
41  
42  
43  
44  
45  
46  
47  
48  
49  
50  
x18  
x32/x36  
VSS  
VDDQ  
DQd  
DQd  
NC/DQPd*  
MODE  
PIN #  
51  
52  
53  
54  
55  
56  
57  
58  
59  
60  
61  
62  
63  
64  
65  
66  
67  
68  
69  
70  
71  
72  
73  
74  
75  
x18  
NC  
NC  
NC  
x32/x36  
NC/DQPa*  
DQa  
PIN #  
76  
77  
78  
79  
80  
81  
82  
83  
84  
85  
86  
87  
88  
89  
90  
91  
92  
93  
94  
95  
96  
97  
98  
99  
100  
x18  
x32/x36  
VSS  
VDDQ  
DQb  
DQb  
NC/DQPb*  
SA  
SA  
ADV#  
ADSP#  
ADSC#  
OE#  
BWE#  
GW#  
CLK  
DQc  
NC  
NC  
NC  
DQa  
NC  
NC  
SA  
VDDQ  
VSS  
VDDQ  
VSS  
NC  
NC  
DQb  
DQb  
DQc  
DQc  
DQc  
DQc  
NC  
NC  
DQa  
DQa  
SA  
SA  
SA  
DQa  
DQa  
VSS  
VDDQ  
DQa  
DQa  
ZZ  
VDD  
NC  
VSS  
9
10  
11  
12  
13  
14  
15  
16  
17  
18  
19  
20  
21  
22  
23  
24  
25  
VSS  
VDDQ  
SA  
SA1  
SA0  
DNU  
DNU  
VSS  
VDD  
NF**  
NF**  
SA  
DQb  
DQb  
DQc  
DQc  
VDD  
VDD  
NC  
VSS  
VDD  
VSS  
CE2#  
BWa#  
BWb#  
DQb  
DQb  
DQd  
DQd  
DQa  
DQa  
DQb  
DQb  
VDDQ  
VSS  
SA  
SA  
SA  
SA  
SA  
SA  
VDDQ  
VSS  
NC  
NC  
BWc#  
BWd#  
DQb  
DQb  
DQPb  
NC  
DQd  
DQd  
DQd  
DQd  
DQa  
DQa  
DQPa  
NC  
DQb  
DQb  
DQb  
DQb  
CE2  
CE#  
SA  
SA  
*No Connect (NC) is used on the x32 version. Parity (DQPx) is used on the x36 version.  
**Pins 43 and 42 are reserved for address expansion, 8Mb and 16Mb respectively.  
4Mb: 256K x 18, 128K x 32/36 Pipelined, SCD SyncBurst SRAM  
MT58L256L18P1.p65 – Rev. 3/00  
Micron Technology, Inc., reserves the right to change products or specifications without notice.  
©2000, Micron Technology, Inc.  
3

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