Datasheet > MT58L128V36F1B-6.8IT

MT58L128V36F1B-6.8IT

更新时间： 2023-08-15 00:00:00

品牌	Logo	应用领域
赛普拉斯 - CYPRESS		静态存储器
页数	文件大小	规格书
31页	628K
描述
Standard SRAM, 128KX36, 6.8ns, CMOS, PBGA119, 14 X 22 MM, PLASTIC, MS-028BHA, BGA-119

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PRELIMINARY

4Mb: 256K x 18, 128K x 32/36

FLOW-THROUGH SYNCBURST SRAM

FUNCTIONAL BLOCK DIAGRAM

256K x 18

ADDRESS

SA0, SA1, SA

MODE

SA0-SA1

SA1'

SA0'

ADV#

CLK

BINARY

COUNTER AND

LOGIC

CLR

ADSC#

ADSP#

BYTE “b”

WRITE DRIVER

BYTE “b”

WRITE REGISTER

DQs

DQPa

DQPb

BWb#

256K x 9 x 2

MEMORY

ARRAY

OUTPUT

BUFFERS

SENSE

AMPS

BYTE “a”

WRITE DRIVER

BYTE “a”

WRITE REGISTER

BWa#

BWE#

INPUT

REGISTERS

GW#

ENABLE

CE#

CE2

CE2#

OE#

FUNCTIONAL BLOCK DIAGRAM

128K x 32/36

ADDRESS

SA0, SA1, SA

MODE

SA0-SA1

ADV#

CLK

BINARY

COUNTER

AND LOGIC

CLR

SA1'

SA0'

ADSC#

ADSP#

BYTE “d”

WRITE DRIVER

BYTE “d”

WRITE REGISTER

BWd#

128K x 8 x 4

(x32)

BYTE “c”

WRITE DRIVER

BYTE “c”

WRITE REGISTER

BWc#

DQs

DQPa

OUTPUT

BUFFERS

128K x 9 x 4

(x36)

SENSE 36

AMPS

BYTE “b”

WRITE DRIVER

MEMORY

ARRAY

BYTE “b”

WRITE REGISTER

BWb#

DQPd

BYTE “a”

WRITE DRIVER

BYTE “a”

WRITE REGISTER

BWa#

BWE#

INPUT

REGISTERS

GW#

ENABLE

CE#

CE2

CE2#

OE#

NOTE: Functional block diagrams illustrate simplified device operation. See truth tables, pin descriptions, and timing diagrams

for detailed information.

4Mb: 256K x 18, 128K x 32/36 Flow-Through SyncBurst SRAM

MT58L256L18F1_C.p65 – Rev. 6/01

MicronTechnology,Inc.,reservestherighttochangeproductsorspecificationswithoutnotice.

123 4 5 6 7...31

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