Datasheet > MT58L128V36F1T-6.8

MT58L128V36F1T-6.8

更新时间： 2023-08-15 00:00:00

品牌	Logo	应用领域
赛普拉斯 - CYPRESS		静态存储器
页数	文件大小	规格书
26页	447K
描述
Cache SRAM, 128KX36, 6.8ns, CMOS, PQFP100, PLASTIC, MS-026, TQFP-100

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4Mb: 256K x 18, 128K x 32/36

FLOW-THROUGH SYNCBURST SRAM

4Mb SYNCBURST^™

SRAM

MT58L256L18F1, MT58L128L32F1,

MT58L128L36F1; MT58L256V18F1,

MT58L128V32F1, MT58L128V36F1

3.3V VDD, 3.3V or 2.5V I/O, Flow-Through

FEATURES

100-PinTQFP

• Fast clock and OE# access times

• Single +3.3V +0.3V/-0.165V power supply (V^DD)

• Separate +3.3V or +2.5V isolated output buffer

supply (V^DDQ)

• SNOOZE MODE for reduced-power standby

• Common data inputs and data outputs

• Individual BYTE WRITE control and GLOBAL WRITE

• Three chip enables for simple depth expansion

and address pipelining

• Clock-controlled and registered addresses, data

I/Os and control signals

• Internally self-timed WRITE cycle

• Burst control pin (interleaved or linear burst)

• Automatic power-down

• 165-pin FBGA package

• 100-pin TQFP package

• Low capacitive bus loading

165-PinFBGA

• x18, x32, and x36 versions available

OPTIONS

MARKING

• Timing (Access/Cycle/MHz)

6.8ns/7.5ns/133 MHz

7.5ns/8.8ns/113 MHz

8.5ns/10ns/100 MHz

10ns/15ns/66 MHz

-6.8

-7.5

-8.5

-10

• Configurations

3.3V I/O

256K x 18

128K x 32

128K x 36

2.5V I/O

MT58L256L18F1

MT58L128L32F1

MT58L128L36F1

NOTE: 1. JEDEC-standardMS-026BHA(LQFP).

256K x 18

128K x 32

128K x 36

MT58L256V18F1

MT58L128V32F1

MT58L128V36F1

GENERALDESCRIPTION

The Micron^®SyncBurst^™SRAM family employs

high-speed, low-power CMOS designs that are fabri-

cated using an advanced CMOS process.

• Packages

100-pin TQFP

165-pin FBGA

Micron’s 4Mb SyncBurst SRAMs integrate a 256K x

18, 128K x 32, or 128K x 36 SRAM core with advanced

synchronous peripheral circuitry and a 2-bit burst

counter. All synchronous inputs pass through registers

controlled by a positive-edge-triggered single clock in-

put (CLK). The synchronous inputs include all ad-

dresses, all data inputs, active LOW chip enable (CE#),

two additional chip enables for easy depth expansion

(CE2#, CE2), burst control inputs (ADSC#, ADSP#,

ADV#), byte write enables (BWx#) and global write

(GW#).

• Operating Temperature Range

Commercial (0°C to +70°C)

None

Industrial (-40°C to +85°C)**

Part Number Example:

MT58L256L18F1T-8.5

* A Part Marking Guide for the FBGA devices can be found on Micron’s

Web site—http://www.micron.com/support/index.html.

** Industrial temperature range offered in specific speed grades and

configurations. Contact factory for more information.

4Mb: 256K x 18, 128K x 32/36 Flow-Through SyncBurst SRAM

MT58L256L18F1_F.p65 – Rev. F, Pub. 1/03 EN

PRODUCTS AND SPECIFICATIONS DISCUSSED HEREIN ARE SUBJECT TO CHANGE BY MICRON WITHOUT NOTICE.

12 3 4 5 6 7...26

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与MT58L128V36F1T-6.8相关器件

型号	品牌	描述	获取价格	数据表
MT58L128V36F1T-6.8IT	CYPRESS	Cache SRAM, 128KX36, 6.8ns, CMOS, PQFP100, PLASTIC, MS-026BHA, TQFP-100	获取价格
MT58L128V36F1T-7.5	CYPRESS	Cache SRAM, 128KX36, 7.5ns, CMOS, PQFP100, PLASTIC, MS-026, TQFP-100	获取价格
MT58L128V36P1B-4	CYPRESS	Standard SRAM, 128KX36, 2.3ns, CMOS, PBGA119, 14 X 22 MM, PLASTIC, MS-028BHA, BGA-119	获取价格
MT58L128V36P1B-4.4	CYPRESS	Standard SRAM, 128KX36, 2.6ns, CMOS, PBGA119, 14 X 22 MM, PLASTIC, MS-028BHA, BGA-119	获取价格
MT58L128V36P1B-5	CYPRESS	Standard SRAM, 128KX36, 2.8ns, CMOS, PBGA119, 14 X 22 MM, PLASTIC, MS-028BHA, BGA-119	获取价格
MT58L128V36P1B-6	CYPRESS	Standard SRAM, 128KX36, 3.5ns, CMOS, PBGA119, 14 X 22 MM, PLASTIC, MS-028BHA, BGA-119	获取价格

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