4Mb : 256K x 18, 128K x 32/36
PIPELINED ZBT SRAM
MT55L256L18P1, MT55L256V18P1,
MT55L128L32P1, MT55L128V32P1,
MT55L128L36P1, MT55L128V36P1
4Mb
ZBT® SRAM
3.3V VDD, 3.3V o r 2.5V I/O
FEATURES
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100-Pin TQFP
• High frequen cy an d 100 percen t bus utilization
• Fast cycle tim es: 6n s, 7.5n s an d 10n s
• Sin gle +3.3V ±5% power supply (VDD)
• Separate +3.3V or +2.5V isolated output buffer
supply (VDDQ)
• Advan ced con trol logic for m in im um con trol
sign al in terface
• Individual BYTE WRITE controls m ay be tied LOW
• Sin gle R/W# (read/write) con trol pin
• CKE# pin to en able clock an d suspen d operation s
• Th ree ch ip en ables for sim ple depth expan sion
• Clock-con trolled an d registered addresses, data
I/Os an d con trol sign als
• In tern ally self-tim ed, fully coh eren t WRITE
• In tern ally self-tim ed, registered outputs to
elim in ate th e n eed to con trol OE#
• SNOOZE MODE for reduced-power stan dby
• Com m on data in puts an d data outputs
• Lin ear or in terleaved burst m odes
• Burst feature (option al)
165-Pin FBGA
(Preliminary Package Data)
• Pin /fun ction com patibility with 2Mb, 8Mb, an d
16Mb ZBT SRAM fam ily
• Autom atic power-down
• 165-pin FBGA package
• 100-pin TQFP package
• 119-pin BGA package
OPTIONS
MARKING
• Tim in g (Access/Cycle/MHz)
3.5n s/6n s/166 MHz
4.2n s/7.5n s/133 MHz
5n s/10n s/100 MHz
• Con figuration s
3.3V I/O
-6
-7.5
-10
2
119-Pin BGA
256K x 18
128K x 32
128K x 36
MT55L256L18P1
MT55L128L32P1
MT55L128L36P1
2.5V I/O
256K x 18
128K x 32
128K x 36
MT55L256V18P1
MT55L128V32P1
MT55L128V36P1
• Package
100-pin TQFP
165-pin FBGA
119-pin , 14m m x 22m m BGA
• Operatin g Tem perature Ran ge
Com m ercial (0°C to +70°C)
In dustrial (-40°C to +85°C)**
Part Number Example:
T
F*
B
NOTE: 1. JEDEC-standard MS-026 BHA (LQFP).
2. JEDEC-standard MS-028 BHA(PBGA).
Non e
IT
* A Part Markin g Guide for th e FBGA devices can be foun d on Micron ’s
Web site—h ttp://www.m icron .com /support/in dex.h tm l.
** In dustrial tem perature ran ge offered in specific speed grades an d
con figuration s. Con tact factory for m ore in form ation .
MT55L256L18P1T-10
4Mb: 256K x 18, 128K x 32/36 Pipelined ZBT SRAM
MT55L256L18P1_D.p65 – Rev. 10/01
Micron Technology, Inc., reservesthe right to change productsor specificationswithout notice.
©2001, Micron Technology, Inc.
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