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MT42C4256F-8/883C PDF预览

MT42C4256F-8/883C

更新时间： 2024-09-30 14:53:59
品牌 Logo 应用领域
MICROSS 动态存储器内存集成电路
页数 文件大小 规格书
38页 311K
描述
Video DRAM, 256KX4, 80ns, CMOS, CDFP28, CERAMIC, FP-28

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MT42C4256F-8/883C 数据手册

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MT42C4256 883C  
256K x 4 VRAM  
AUSTIN SEMICONDUCTOR, INC.  
Limited Supply - Consult Factory  
256K x 4 DRAM  
VRAM  
WITH 512 x 4 SAM  
AVAILABLE AS MILITARY  
SPECIFICATION  
PIN ASSIGNMENT (Top View)  
•
•
SMD 5962-89497  
MIL-STD-883  
28-Pin DIP  
(400 MIL)  
28-Pin SOJ  
28-Pin LCC  
FEATURES  
SC  
SDQ1  
SDQ2  
TR/OE  
DQ1  
1
2
3
4
5
6
7
8
9
28 Vss  
SC  
SDQ1  
SDQ2  
TR/OE  
DQ1  
1
2
3
4
5
6
7
8
9
28 Vss  
27 SDQ4  
26 SDQ3  
25 SE  
•
•
•
•
•
Industry standard pinout, timing and functions  
High-performance, CMOS silicon-gate process  
Single +5V ±10% power supply  
Inputs and outputs are fully TTL compatible  
Refresh modes: RAS-ONLY, CAS-BEFORE-RAS (CBR)  
and HIDDEN  
27 SDQ4  
26 SDQ3  
25 SE  
24 DQ4  
23 DQ3  
22 DSF  
21 CAS  
20 QSF  
24 DQ4  
23 DQ3  
22 DSF  
21 CAS  
20 QSF  
19 A0  
DQ2  
DQ2  
ME/WE  
NC  
ME/WE  
NC  
RAS  
RAS  
A0  
A8 10  
A6 11  
A5 12  
A4 13  
Vcc 14  
A8 10  
A6 11  
A5 12  
A4 13  
Vcc 14  
19  
•
•
•
512-cycle refresh within 8ms  
18 A1  
18 A1  
17 A2  
16 A3  
15 A7  
Optional FAST PAGE MODE access cycles  
Dual port organization: 256K x 4 DRAM port  
512 x 4 SAM port  
17 A2  
16 A3  
15 A7  
•
•
No refresh required for serial access memory  
Low power: 15mW standby; 275mW active, typical  
28-Pin FP  
(F-12)  
SPECIAL FUNCTIONS  
•
•
•
•
•
•
JEDEC Standard Function set  
PERSISTENT MASKED WRITE  
SPLIT READ TRANSFER  
WRITE TRANSFER/ SERIAL INPUT  
ALTERNATE WRITE TRANSFER  
BLOCK WRITE  
SC  
SDQ1  
1
2
3
4
5
6
7
8
28  
27  
26  
25  
24  
23  
22  
21  
20  
19  
18  
17  
16  
15  
Vss  
SDQ4  
SDQ3  
SE  
DQ4  
DQ3  
DSF  
CAS  
QSF  
A0  
SDQ2  
TR/OE  
DQ1  
DQ2  
ME/WE  
NC  
RAS  
A8  
A6  
9
10  
11  
12  
13  
14  
OPTIONS  
•
MARKING  
Timing [DRAM, SAM (cycle/ access)]  
A1  
A2  
A3  
A7  
A5  
A4  
Vcc  
80ns, 30ns/ 25ns  
100ns, 30ns/ 27ns  
120ns, 35ns/ 35ns  
- 8  
-10  
-12  
•
Packages  
Ceramic SOJ  
DCJ No. 500  
Ceramic DIP (400 mil)  
Ceramic LCC  
Ceramic Flat Pack  
C
No. 109  
EC No. 203  
No. 302  
The DRAM portion ofthe VRAM is functionally identical  
to the MT4C4256 (256K x 4 DRAM). Four 512-bit data  
registers make up the SAM portion of the VRAM. Data I/ O  
and internal data transfer are accomplished using three  
separate bidirectional data paths; the 4-bit random access  
I/ O port, the four internal 512 bit wide paths between the  
DRAM and the SAM, and the 4-bit serial I/ O port for the  
SAM. The rest of the circuitry consists of the control, timing  
and address decoding logic.  
F
GENERAL DESCRIPTION  
The MT42C4256 883C is a high-speed, dual port CMOS  
dynamic random access memory or video RAM (VRAM)  
containing 1,048,576 bits. These bits may be accessed by a  
4-bit wide DRAM port or a 512 x 4-bit serial access memory  
(SAM) port. Data may be transferred bidirectionally be-  
tween the DRAM and the SAM.  
Each port may be operated asynchronously and indepen-  
dently of the other except when data is being transferred  
MT42C4256 883C  
REV. 3/97  
DS000016  
Austin Semiconductor, Inc., reserves the right to change products or specifications without notice.  
3-27  
1234567...38

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