Datasheet > MT29C4G48MAZAPAKD-5IT

MT29C4G48MAZAPAKD-5IT

更新时间： 2022-04-12 13:47:30

品牌	Logo	应用领域
镁光 - MICRON		闪存光电二极管动态存储器
页数	文件大小	规格书
15页	428K
描述
NAND Flash and Mobile LPDRAM 152-Ball Package-on-Package (PoP) Combination Memory (TI OMAPâ¢) MT29C Family

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‡

Preliminary

152-Ba ll NAND Fla sh a n d Mo b ile LPDRAM Po P (TI OMAP) MCP

Fe a t u re s

NAND Fla sh a n d Mo b ile LPDRAM

152-Ba ll Pa cka g e -o n -Pa cka g e (Po P)

Co m b in a t io n Me m o ry (TI OMAP™)

MT29C Fa m ily

Current production part numbers: See Table 1 on page 3

Fig u re 1:

Po P Blo ck Dia g ra m

Fe a t u re s

• Micron NAND Flash and Mobile LPDRAM

components

• RoHS-compliant, “green” package

• Separate NAND Flash and Mobile LPDRAM

interfaces

• Space-saving package-on-package combination

• Low-voltage operation (1.70–1.95V)

• Industrial temperature range: –40°C to +85°C

NAND Flash

Device

NAND Flash

Interface

NAND Flash

Power

NAND Fla sh -Sp e cific Fe a t u re s

• Organization

– Page size

x8: 2112 bytes (2048 + 64 bytes)

x16: 1056 words (1024 + 32 words)

– Block size: 64 pages (128K + 4K bytes)

LP-DRAM

Device

LP-DRAM Power

LP-DRAM Interface

Mo b ile LPDRAM-Sp e cific Fe a t u re s

• No external voltage reference required

• No minimum clock rate requirement

• 1.8V LVCMOS-compatible inputs

• Programmable burst lengths

• Partial-array self refresh (PASR)

• Deep power-down (DPD) mode

• Selectable output drive strength

Op t io n s

Ma rkin g

• LP-DRAM

166 MHz CL3²

133 MHz CL3

-6

-75

• STATUS REGISTER READ (SRR) supported

Notes: 1. Contact factory for remapped SRR output.

2. CL = CAS (READ) latency.

PDF: 09005aef8326e5ac / Source: 09005aef8326e59a

152ball_ nand_lpdram_j4xx_omap.fm - Rev. E 4/09 EN

Micron Technology, Inc., reserves the right to change products or specifications without notice.

‡Products and specifications discussed herein are for evaluation and reference purposes only and are subject to change by

Micron without notice. Products are only warranted by Micron to meet Micron’s production data sheet specifications.

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MT29F128G08AKCABH2-10	MICRON	This tech note describes considerations in thermal applications for Micron memory devices,	获取价格
MT29F128G08AKCABH2-10IT	MICRON	This tech note describes considerations in thermal applications for Micron memory devices,	获取价格
MT29F128G08AMCABH2-10ITZ	MICRON	This tech note describes considerations in thermal applications for Micron memory devices,	获取价格
MT29F128G08AMCABJ2-10Z	MICRON	This tech note describes considerations in thermal applications for Micron memory devices,	获取价格
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MT29F128G08CBCEBJ4-37ITR	MICRON	Anticipating electrostatic discharge (ESD) technology roadmap trends with ESD control hard	获取价格
MT29F128G08CFABBWP-12IT	MICRON	Anticipating electrostatic discharge (ESD) technology roadmap trends with ESD control hard	获取价格
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MT29F16G08ABABAWP-AIT	MICRON	This tech note describes considerations in thermal applications for Micron memory devices,	获取价格
MT29F16G08ABABAWP-IT	MICRON	This tech note describes considerations in thermal applications for Micron memory devices,	获取价格
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