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MSC180SMA120 PDF预览

MSC180SMA120

更新时间: 2023-12-06 20:09:15
品牌 Logo 应用领域
美国微芯 - MICROCHIP /
页数 文件大小 规格书
15页 7142K
描述
MSC180SMA120 is part of our newest family of SiC MOSFET devices.?Microchip's SiC solutions focus o

MSC180SMA120 数据手册

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MSC180SMA120S  
1200 V, 180 mΩ SiC N-Channel Power MOSFET  
Product Overview  
TO-268 (D3PAK) Package, Typ. 180 mΩ at 20 VGS, 207 mΩ at 18 VGS  
Features  
The following are key features of the MSC180SMA120S device:  
Low capacitances and low gate charge  
Fast switching speed due to low internal gate resistance (ESR)  
Stable operation at high junction temperature, TJ(max) = 175 °C  
Fast and reliable body diode  
Superior avalanche ruggedness  
RoHS compliant  
Benefits  
The following are benefits of the MSC180SMA120S device:  
High efficiency to enable lighter, more compact system  
Simple to drive and easy to parallel  
Improved thermal capabilities and lower switching losses  
Eliminates the need for external freewheeling diode  
Lower system cost of ownership  
Applications  
The MSC180SMA120S device is designed for the following applications:  
PV inverter, converter, and industrial motor drives  
Smart grid transmission and distribution  
Induction heating and welding  
H/EV powertrain and EV charger  
Power supply and distribution  
DS00003886B-page 1  
Data Sheet  
© 2022 Microchip Technology Inc.  
and its subsidiaries  

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