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MSB20M PDF预览

MSB20M

更新时间: 2024-11-20 02:49:27
品牌 Logo 应用领域
虹扬 - HY /
页数 文件大小 规格书
3页 438K
描述
Surface Mount Glass Passivated Bridge Rectifiers

MSB20M 数据手册

 浏览型号MSB20M的Datasheet PDF文件第2页浏览型号MSB20M的Datasheet PDF文件第3页 
www.hygroup.com.tw  
MSB20A THRU MSB20M  
Reverse Voltage - 50 to 1000 Volts  
Surface Mount Glass Passivated  
Bridge Rectifiers  
Forward Current - 2.0 Amperes  
Features  
Compact, Thin Profile Package Design  
MSBL  
Ideal for SMT manufacturing  
RoHS  
COMPLIANT  
Reliable robust construction  
Meet UL flammability classification 94V-0  
Mechanical Data  
Polarity: Symbol marked on body  
Mounting position: Any  
Note: Products with logo  
or  
are made by HY Electronic (Cayman) Limited.  
Applications  
General purpose use in AC/DC bridge full wave rectification,  
for SMPS, lighting ballaster, adapter, etc.  
Package Outline Dimensions in Inches (Millimeters)  
Maximum Ratings and Electrical Characteristics  
Rating at 25ambient temperature unless otherwise specified.  
Single phase, half wave, 60Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
MSB MSB MSB MSB MSB MSB MSB  
Unit  
Characteristics  
Symbol  
20A  
20B  
100  
70  
20D  
200  
140  
200  
20G  
20J  
600  
420  
600  
20K  
800  
560  
800  
20M  
1000  
700  
Maximum Repetitive Peak Reverse Voltage  
Maximum RMS Voltage  
VRRM  
VRMS  
VDC  
50  
400  
V
V
V
A
35  
280  
Maximum DC Blocking Voltage  
50  
100  
400  
1000  
2.0  
I(AV)  
Maximum Average Forward Rectified Current @TC=110 (Note1)  
75  
Peak Forward Surge Current  
Single Half Sine-Wave  
@ 8.3ms  
@ 1.0ms  
IFSM  
A
150  
I2t Rating for Fusing (1ms < t < 8.3ms)  
Peak Forward Voltage Per Diode at 1A DC  
Peak Forward Voltage Per Diode at 2A DC  
I2t  
VF  
VF  
A2s  
V
23.3  
0.98  
1
V
5
Maximum DC Reverse Current at Rated @TJ=25℃  
DC Blocking Voltage per Diode @TJ=125℃  
Typical junction Capacitance per element (Note 1)  
Typical Thermal Resistance to Ambient (Note2)  
Typical Thermal Resistance to case (Note2)  
Typical Thermal Resistance to lead (Note2)  
Operating Junction Temperature Range  
Storage Temperature Range  
IR  
μA  
500  
30  
55  
CJ  
RθJA  
RθJC  
RθJL  
TJ  
pF  
10  
/W  
15  
-55 to +150  
-55 to +150  
TSTG  
Notes 1. Measured at 1.0 MHz and applied reverse voltage of 4.0V DC.  
2.Thermal Resistance test performed in accordance with JESD-51. Unit mounted on glass-epoxy substrate with  
1oz/ft2_20x20 mm copper pad per pin.  
3.The typical data above is for reference only  
MSB20*-13-92-00  
Rev. 11, 18-May-2020  

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