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MS8100-BP PDF预览

MS8100-BP

更新时间: 2024-01-17 01:53:58
品牌 Logo 应用领域
美微科 - MCC 二极管
页数 文件大小 规格书
3页 128K
描述
Rectifier Diode, Schottky, 1 Phase, 1 Element, 8A, 100V V(RRM), Silicon, DO-201AD, DO-201AD, 2 PIN

MS8100-BP 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:DO-201AD
包装说明:DO-201AD, 2 PIN针数:2
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.72
其他特性:LOW NOISE应用:GENERAL PURPOSE
外壳连接:ISOLATED配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
JEDEC-95代码:DO-201ADJESD-30 代码:O-XALF-W2
JESD-609代码:e3最大非重复峰值正向电流:200 A
元件数量:1相数:1
端子数量:2最大输出电流:8 A
封装主体材料:UNSPECIFIED封装形状:ROUND
封装形式:LONG FORM峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified最大重复峰值反向电压:100 V
表面贴装:NO技术:SCHOTTKY
端子面层:Matte Tin (Sn)端子形式:WIRE
端子位置:AXIAL处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

MS8100-BP 数据手册

 浏览型号MS8100-BP的Datasheet PDF文件第2页浏览型号MS8100-BP的Datasheet PDF文件第3页 
M C C  
MS820  
THRU  
MS8100  
ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents  
20736 Marilla Street Chatsworth  
ꢆꢋꢅꢌꢍꢎꢍꢍ  
ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ  
$ꢉ%ꢒꢅ   ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ  
TM  
Micro Commercial Components  
ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ  
Features  
·
·
·
·
Low Switching Noise  
8 Amp Schottky  
Barrier Rectifier  
20 to 100 Volts  
Low Forward Voltage Drop  
High Current Capability  
High Surge Current Capability  
Maximum Ratings  
DO-201AD  
·
·
·
Operating Temperature: -55°C to +125°C  
Storage Temperature: -55°C to +150°C  
Maximum Thermal Resistance; 30°C/W Junction To Lead  
MCC  
Catalog  
Number  
Device  
Marking  
Maximum  
Recurrent  
Peak  
Reverse  
Voltage  
20V  
Maximum Maximum  
RMS  
DC  
Voltage  
Blocking  
Voltage  
D
MS820  
MS830  
MS835  
MS840  
MS845  
MS860  
MS880  
MS820  
MS830  
MS835  
MS840  
MS845  
MS860  
MS880  
14V  
21V  
24.5V  
28V  
31.5V  
42V  
56V  
20V  
30V  
35V  
40V  
45V  
60V  
80V  
30V  
35V  
40V  
45V  
60V  
80V  
A
Cathode  
Mark  
B
D
MS8100  
MS8100  
100V  
70V  
100V  
Electrical Characteristics @ 25°C Unless Otherwise Specified  
C
Average Forward  
Current  
IF(AV)  
8.0A  
TA = 120°C  
Peak Forward Surge  
Current  
IFSM  
200A  
8.3ms, half sine  
Maximum  
DIMENSIONS  
Instantaneous  
Forward Voltage  
MS820-MS860  
MS880-MS8100  
Maximum DC  
Reverse Current At  
Rated DC Blocking  
Voltage  
INCHES  
MIN  
.287  
.189  
.048  
MM  
MIN  
7.30  
4.80  
1.20  
25.40  
DIM  
A
B
C
D
MAX  
.374  
.208  
.052  
---  
MAX  
9.50  
5.30  
1.30  
---  
NOTE  
VF  
IR  
.62V  
.85V  
IFM = 8.0A;  
TA = 25°C*  
1.000  
1.0mA  
50mA  
TA = 25°C  
TA = 100oC  
Typical Junction  
Capacitance  
CJ  
550pF  
Measured at  
1.0MHz, VR=4.0V  
*Pulse test: Pulse width 300 msec, Duty cycle 1%  
www.mccsemi.com  
Revision: 3  
2003/04/30  

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