Datasheet > MS1N8162US

MS1N8162US

更新时间： 2025-09-18 19:43:07

品牌	Logo	应用领域
美国微芯 - MICROCHIP		脉冲
页数	文件大小	规格书
6页	376K
描述
反向峰值电压VRWM(V):25V;最小反向击穿电压VBR(V):28.5V;最大钳位电压Vc(V):41.6V;最大峰值脉冲电流IPP(A):3.6A;最大峰值脉冲功率Ppk(W):150W;元器件封装:A，SQ-MELF;

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中文翻译

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数据手册

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MS1N8162US 数据手册

1N8149 – 1N8182

Voidless-Hermetically-Sealed Unidirectional 150 W

Low-Capacitance Transient Voltage Suppressors

Available

DESCRIPTION

This series of voidless-hermetically-sealed unidirectional low-capacitance Transient Voltage Suppressor

(TVS) designs are ideal for protecting higher frequency applications in high-reliability applications where

a failure cannot be tolerated. They include a unique rectifier diode in series and opposite direction from

the TVS to achieve a very low capacitance of 4 pF. This product series provides a working peak

“standoff” voltage selection from 6.8 to 170 volts with 150 watt ratings. They are very robust in hard-

glass construction and also use an internal metallurgical bond identified as Category 1 for high reliability

applications. These devices are also available in axial leaded packages for thru-hole mounting.

Important: For the latest information, visit our website http://www.microsemi.com.

FEATURES



High surge current and peak pulse power unidirectional protection for sensitive circuits.

Very low capacitance for high frequency or high baud rate applications.



Bidirectional capability with two devices in anti-parallel (see Figure 5).

Triple-layer passivation.

“A” Package

Internal “Category 1” metallurgical bonds.

Voidless hermetically sealed glass package.

RoHS compliant versions are available.

Also available in:

“A” MELF package

(surface mount)

1N8149US – 1N8182US

APPLICATIONS / BENEFITS



High reliability transient protection.

Extremely robust construction.

Working peak “standoff” voltage (V_WM) from 6.8 to 170 volts.

Available as 150 W peak pulse power (P_PP) at 10/1000 µs.

Lowest available capacitance for 150 W rated TVS.

ESD and EFT protection per IEC61000-4-2 and IEC61000-4-4 respectively.

Secondary lightning protection per select levels in IEC61000-4-5.

Flexible axial-leaded mounting terminals.

Nonsensitive to ESD per MIL-STD-750 method 1020.

Inherently radiation hard as described in Microsemi MicroNote 050.

MAXIMUM RATINGS

MSC – Lawrence

6 Lake Street,

Parameters/Test Conditions

Symbol

T_Jand T_STG

Value

-55 to +175

Unit

^oC

Lawrence, MA 01841

1-800-446-1158

(978) 620-2600

Junction and Storage Temperature

Capacitance at zero volts

Thermal Resistance junction to ambient

Peak Pulse Power at 25 ^oC (10µs/1000µs)

Impulse repetition rate (duty factor)

Steady State (Average) Power @ T_A= 25 ^oC

Solder Temperature (10 s maximum)

R_θJA

150

^oC/W

Fax: (978) 689-0803

P_PP

150

MSC – Ireland

d.f

0.01

Gort Road Business Park,

Ennis, Co. Clare, Ireland

Tel: +353 (0) 65 6840044

Fax: +353 (0) 65 6822298

P_M(AV)

1.0

^oC

260

Note: Steady-state power ratings with reference to ambient are for PC boards where thermal resistance from

Website:

mounting point to ambient is sufficiently controlled where T_J(MAX)is not exceeded.

www.microsemi.com

T4-LDS-xxxx, Rev x (10-02-14)

Page 1 of 6

12 3 4 5 6

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MS1N8163US	MICROCHIP	获取价格	反向峰值电压VRWM(V):28V;最小反向击穿电压VBR(V):31.4V;最大钳位电压
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MS1N8169US	MICROCHIP	获取价格	反向峰值电压VRWM(V):47V;最小反向击穿电压VBR(V):53.2V;最大钳位电压
MS1N8170US	MICROCHIP	获取价格	反向峰值电压VRWM(V):53V;最小反向击穿电压VBR(V):58.9V;最大钳位电压
MS1N8171US	MICROCHIP	获取价格	反向峰值电压VRWM(V):58V;最小反向击穿电压VBR(V):64.6V;最大钳位电压

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