Datasheet > 射频和微波 > 射频/微波上/下变频器> MRFIC1813

MRFIC1813

更新时间： 2024-01-22 16:29:45

品牌	Logo	应用领域
摩托罗拉 - MOTOROLA		射频和微波射频上变频器射频下变频器微波上变频器微波下变频器放大器
页数	文件大小	规格书
8页	161K
描述
1.9 GHz UPMIXER AND EXCITER AMPLIFIER

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技术参数
数据手册

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MRFIC1813 技术参数

生命周期：	Transferred	包装说明：	TSSOP16,.25
Reach Compliance Code：	unknown	风险等级：	5.2
特性阻抗：	50 Ω	构造：	COMPONENT
最大中频频率：	350 MHz	最小中频频率：	70 MHz
LO 可调谐：	YES	安装特点：	SURFACE MOUNT
端子数量：	16	最高工作温度：	85 °C
最低工作温度：	-30 °C	封装主体材料：	PLASTIC/EPOXY
封装等效代码：	TSSOP16,.25	电源：	3 V
RF输出最大频率：	2500 MHz	RF输出频率-最小值：	1700 MHz
射频/微波设备类型：	UP CONVERTER	子类别：	RF/Microwave Up/Down Converters
最大压摆率：	35 mA	表面贴装：	YES
技术：	GAAS	上转换增益-最小值：	12 dB
Base Number Matches：	1

MRFIC1813 数据手册

(1)

IF Input

LO Input

RF Output

(MHz)

8.3

7.3

7.1

6.6

6.5

6.1

5.7

–452.4

–318.5

–211.3

–156.4

–123.1

–100.7

–84.2

100

150

200

250

300

350

1100

1200

1300

1400

1500

1600

1700

1800

1900

2000

2100

2200

2300

2400

2500

62.5

58.1

53.7

50.2

47.3

44.4

42.0

40.6

39.6

38.7

38.2

38.4

38.9

39.5

3.1

4.3

4.7

4.2

3.9

3.2

1.6

30.4

33.6

16.9

2.3

0.5

42.6

49.1

40.6

33.8

33.3

32.9

29.6

27.4

–0.7

–2.2

–3.6

–5.1

–6.5

–7.8

14.2

17.7

15.7

13.7

13.2

11.9

(1) Includes T1 shown in Figure 1.

Table 1. Port Impedances versus Frequency

(V , V , V , TX EN = 3 Vdc)

D1 D2 D3

APPLICATIONS INFORMATION

DESIGN CONSIDERATIONS

The MRFIC1813 combines a single–balanced MESFET

mixer with an exciter amplifier. It is usable for transmit fre-

quencies from 1.7 to 2.5 GHz and IF frequencies from 70 to

350 MHz. The design is optimized for low–side local oscilla-

tor injection in hetrodyne transmit applications.

Minimal off–chip matching is required while allowing for

flexibility and performance optimization. An active balun is

employed at the IF port which gives good balance down to at

least 70 MHz. A passive splitter is used at the LO input to

complete the single–balanced configuration.

conversion gain is reduced to about 8 dB. Microstrip induc-

tors T1 and T2 combine with inductance internal to the de-

vice to form RF chokes. Some tuning of the RF output can be

achieved with T1.

As with all RF devices, circuit layout is important. Con-

trolled impedance lines should be used for all RF and IF in-

terconnects. As shown in Figure 1, power supply by–passing

should be used to avoid device instability. Ground vias

should be included near all ground connections indicated in

the schematic. Off–chip components should be mounted as

close to the IC leads as possible.

CIRCUIT CONSIDERATIONS

EVALUATION BOARDS

Figure 1 shows the application circuit used to gather the

data presented in the characterization curves. As shown in

Table 1, the IF port impedance is very high. Three hundred

ohms was chosen for R1 to shunt the IF port as a compro-

mise of gain and bandwidth. A 50 Ω resistor can be used and

L1 and C5 eliminated to provide a broadband match. The

Evaluation boards are available for RF Monolithic Inte-

grated Circuits by adding a “TF” to the device type. For a

complete list of currently available boards and one in devel-

opment for newly introduced products, please contact your

local Motorola Distributor or Sales Office.

MOTOROLA RF DEVICE DATA

MRFIC1813

1...3 4 567 8

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