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MR82C37AB PDF预览

MR82C37AB

更新时间: 2024-01-15 12:17:08
品牌 Logo 应用领域
英特矽尔 - INTERSIL 控制器
页数 文件大小 规格书
23页 150K
描述
CMOS High Performance Programmable DMA Controller

MR82C37AB 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
包装说明:QCCN, LCC44,.65SQReach Compliance Code:unknown
ECCN代码:3A001.A.2.CHTS代码:8542.31.00.01
风险等级:5.78地址总线宽度:16
总线兼容性:80C286; 80286; 80186; 80C86; 8086; 80C88; 8088; 8085; Z80; NSC800最大时钟频率:8 MHz
外部数据总线宽度:8JESD-30 代码:S-CQCC-N44
JESD-609代码:e0DMA 通道数量:4
端子数量:44最高工作温度:125 °C
最低工作温度:-55 °C封装主体材料:CERAMIC, METAL-SEALED COFIRED
封装代码:QCCN封装等效代码:LCC44,.65SQ
封装形状:SQUARE封装形式:CHIP CARRIER
电源:5 V认证状态:Not Qualified
筛选级别:38535Q/M;38534H;883B子类别:DMA Controllers
最大压摆率:16 mA最大供电电压:5.5 V
最小供电电压:4.5 V标称供电电压:5 V
表面贴装:YES技术:CMOS
温度等级:MILITARY端子面层:Tin/Lead (Sn/Pb)
端子形式:NO LEAD端子节距:1.27 mm
端子位置:QUADuPs/uCs/外围集成电路类型:DMA CONTROLLER
Base Number Matches:1

MR82C37AB 数据手册

 浏览型号MR82C37AB的Datasheet PDF文件第17页浏览型号MR82C37AB的Datasheet PDF文件第18页浏览型号MR82C37AB的Datasheet PDF文件第19页浏览型号MR82C37AB的Datasheet PDF文件第20页浏览型号MR82C37AB的Datasheet PDF文件第21页浏览型号MR82C37AB的Datasheet PDF文件第22页 
82C37A  
Die Characteristics  
DIE DIMENSIONS:  
GLASSIVATION:  
Type: Nitrox  
Thickness: 10kÅ ± 3kÅ  
148 x 159 x 19 ±1mils  
(3760- x 4040 x 525µm)  
WORST CASE CURRENT DENSITY:  
0.6 x 10 A/cm  
5
2
METALLIZATION:  
Type: SiAlCu  
Thickness: Metal 1: 8kÅ ± 0.75kÅ  
Thickness: Metal 2: 12kÅ ± 1.0kÅ  
Metallization Mask Layout  
82C37A  
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Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without  
notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate  
and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which  
may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.  
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4-214  

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