Datasheet > MQSMBJ14ATR

MQSMBJ14ATR

更新时间： 2024-11-20 04:47:47

品牌	Logo	应用领域
美高森美 - MICROSEMI		局域网光电二极管
页数	文件大小	规格书
4页	182K
描述
Trans Voltage Suppressor Diode, 600W, 14V V(RWM), Unidirectional, 1 Element, Silicon, DO-214AA, PLASTIC PACKAGE-2

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MQSMBJ14ATR 技术参数

是否Rohs认证：	不符合	生命周期：	Obsolete
零件包装代码：	DO-214AA	包装说明：	PLASTIC PACKAGE-2
针数：	2	Reach Compliance Code：	unknown
ECCN代码：	EAR99	HTS代码：	8541.10.00.50
风险等级：	5.36	最大击穿电压：	17.2 V
最小击穿电压：	15.6 V	配置：	SINGLE
二极管元件材料：	SILICON	二极管类型：	TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95代码：	DO-214AA	JESD-30 代码：	R-PDSO-C2
JESD-609代码：	e0	湿度敏感等级：	1
最大非重复峰值反向功率耗散：	600 W	元件数量：	1
端子数量：	2	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	SMALL OUTLINE
峰值回流温度（摄氏度）：	NOT SPECIFIED	极性：	UNIDIRECTIONAL
最大功率耗散：	1.38 W	认证状态：	Not Qualified
最大重复峰值反向电压：	14 V	表面贴装：	YES
技术：	AVALANCHE	端子面层：	TIN LEAD
端子形式：	C BEND	端子位置：	DUAL
处于峰值回流温度下的最长时间：	NOT SPECIFIED	Base Number Matches：	1

MQSMBJ14ATR 数据手册

SMBJ5.0 thru SMBJ170A, CA, e3

and SMBG5.0 thru SMBG170A, CA, e3

SURFACE MOUNT 600 Watt

Transient Voltage Suppressor

S C O T T S D A L E D I V I S I O N

DESCRIPTION

APPEARANCE

This SMBJ5.0-170A or SMBG5.0-170A series of surface mount 600 W

Transient Voltage Suppressors (TVSs) protects a variety of voltage-sensitive

components from destruction or degradation. It is available in J-bend design

(SMBJ) with the DO-214AA package for greater PC board mounting density or

in a Gull-wing design (SMBG) in the DO-215AA for visible solder connections.

It is also available in both unidirectional and bidirectional configurations with a

C or CA suffix part number as well as RoHS Compliant with an e3 suffix. Their

response time is virtually instantaneous. As a result, they can be used for

protection from ESD or EFT per IEC61000-4-2 and IEC61000-4-4, or for

inductive switching environments and induced RF protection. They can also

protect from secondary lightning effects per IEC61000-4-5 and class levels

defined herein. Microsemi also offers numerous other TVS products to meet

NOTE: All SMB series are

equivalent to prior SMS package

identifications.

higher and lower power demands and special applications.

IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com

FEATURES

APPLICATIONS / BENEFITS

• Available in both unidirectional and bidirectional

•

Economical surface mount design in both J-bend or

Gull-wing terminations

construction (add C or CA suffix for bidirectional)

• Selections for 5.0 to 170 volts standoff voltages (V_WM

)

Protects sensitive components such as IC’s, CMOS,

Bipolar, BiCMOS, ECL, DTL, T²L, etc.

• Optional 100% screening for avionics grade is available

by adding MA prefix to part number for 100% temperature

cycle -55^oC to +125^oC (10X) as well as surge (3X) and 24

hours HTRB with post test V_Z& I_R(in operating direction

for unidirectional or both directions for bidirectional)

•

Protection from switching transients & induced RF

Compliant to IEC61000-4-2 and IEC61000-4-4 for

ESD and EFT protection respectively

•

Secondary lightning protection per IEC61000-4-5 with

42 Ohms source impedance:

• Options for screening in accordance with MIL-PRF-19500

for JAN, JANTX, and JANTXV by adding MQ, MX, or MV

prefixes respectively to part numbers.

Class 1: SMB 5.0 to SMB 120A or CA

Class 2: SMB 5.0 to SMB 60A or CA

Class 3: SMB 5.0 to SMB 30A or CA

Class 4: SMB 5.0 to SMB 15A or CA

• Axial-lead equivalent packages for thru-hole mounting

available as P6KE6.8 to P6KE200CA (consult factory for

other surface mount options)

•

Secondary lightning protection per IEC61000-4-5 with

12 Ohms source impedance:

• Moisture classification is Level 1 with no dry pack required

per IPC/JEDEC J-STD-020B

Class 1: SMB 5.0 to SMB 36A or CA

Class 2: SMB 5.0 to SMB 18A or CA

• RoHS compliant devices available by adding an “e3” suffix

•

MAXIMUM RATINGS

• Peak Pulse Power dissipation at 25^ºC: 600 watts at

10/1000 μs (also see Fig 1,2, and 3).

MECHANICAL AND PACKAGING

•

CASE: Void-free transfer molded thermosetting

epoxy body meeting UL94V-0

• Impulse repetition rate (duty factor): 0.01%

•

TERMINALS: Gull-wing or C-bend (modified J-bend)

tin-lead or RoHS compliant annealed matte-tin plating

solderable per MIL-STD-750, method 2026

• t_clamping(0 volts to V_(BR)min.): < 100 ps theoretical for

unidirectional and < 5 ns for bidirectional

• Operating and Storage temperature: -65^ºC to +150^ºC

•

POLARITY: Cathode indicated by band. No marking

on bi-directional devices

• Thermal resistance: 25 ^ºC/W junction to lead, or 90^ºC/W

junction to ambient when mounted on FR4 PC board (1oz

Cu) with recommended footprint (see last page)

MARKING: Part number without standard prefix (e.g.

5.0, 5.0A, 5.0CA, 5.0Ae3, 36, MX36A, 36CAe3, etc.)

• Steady-State Power dissipation: 5 watts at T_L= 25^oC, or

1.38 watts at T_A= 25^ºC when mounted on FR4 PC board

with recommended footprint

TAPE & REEL option: Standard per EIA-481-1-A with

12 mm tape, 750 per 7 inch reel or 2500 per 13 inch

reel (add “TR” suffix to part number)

•

WEIGHT: 0.1 grams

• Forward Surge at 25ºC: 100 Amps peak impulse of 8.3

See package dimension on last page

ms half-sine wave (unidirectional only)

• Solder temperatures: 260 ^ºC for 10 s (maximum)

6-20-2007 REV H

Microsemi

Page 1

Scottsdale Division

8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503

12 3 4

中文翻译

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与MQSMBJ14ATR相关器件

型号	品牌	获取价格	描述	数据表
MQSMBJ14C	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 600W, 14V V(RWM), Bidirectional, 1 Element, Silicon, DO-21
MQSMBJ14CAE3	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 600W, 14V V(RWM), Bidirectional, 1 Element, Silicon, DO-21
MQSMBJ14CAE3TR	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 600W, 14V V(RWM), Bidirectional, 1 Element, Silicon, DO-21
MQSMBJ14CE3	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 600W, 14V V(RWM), Bidirectional, 1 Element, Silicon, DO-21
MQSMBJ14CE3TR	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 600W, 14V V(RWM), Bidirectional, 1 Element, Silicon, DO-21
MQSMBJ14CTR	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 600W, 14V V(RWM), Bidirectional, 1 Element, Silicon, DO-21
MQSMBJ14E3	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 600W, 14V V(RWM), Unidirectional, 1 Element, Silicon, DO-2
MQSMBJ14E3TR	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 600W, 14V V(RWM), Unidirectional, 1 Element, Silicon, DO-2
MQSMBJ14TR	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 600W, 14V V(RWM), Unidirectional, 1 Element, Silicon, DO-2
MQSMBJ150	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 600W, 150V V(RWM), Unidirectional, 1 Element, Silicon, DO-

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