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MPSH11 PDF预览

MPSH11

更新时间: 2024-09-30 22:26:15
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体小信号双极晶体管射频小信号双极晶体管放大器
页数 文件大小 规格书
8页 184K
描述
NPN RF Transistor

MPSH11 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:TO-92
包装说明:TO-92, 3 PIN针数:3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.21.00.95风险等级:5
Samacsys Confidence:Samacsys Status:Released
Samacsys PartID:582354Samacsys Pin Count:3
Samacsys Part Category:Transistor BJT NPNSamacsys Package Category:Other
Samacsys Footprint Name:TO127P254X732-3Samacsys Released Date:2017-01-11 16:35:06
Is Samacsys:N其他特性:LOW NOISE
最大集电极电流 (IC):0.05 A基于收集器的最大容量:0.7 pF
集电极-发射极最大电压:25 V配置:SINGLE
最小直流电流增益 (hFE):60最高频带:VERY HIGH FREQUENCY BAND
JEDEC-95代码:TO-92JESD-30 代码:O-PBCY-T3
JESD-609代码:e1元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:CYLINDRICAL峰值回流温度(摄氏度):NOT APPLICABLE
极性/信道类型:NPN最大功率耗散 (Abs):0.35 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:NO端子面层:Tin/Silver/Copper (Sn/Ag/Cu)
端子形式:THROUGH-HOLE端子位置:BOTTOM
处于峰值回流温度下的最长时间:NOT APPLICABLE晶体管应用:AMPLIFIER
晶体管元件材料:SILICON标称过渡频率 (fT):650 MHz
Base Number Matches:1

MPSH11 数据手册

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Discr ete P OWER & Sign a l  
Tech n ologies  
MPSH11  
MMBTH11  
C
E
TO-92  
C
B
B
E
SOT-23  
Mark: 3G  
NPN RF Transistor  
This device is designed for common-emitter low noise amplifier  
and mixer applications with collector currents in the 100 µA to  
10 mA range to 300 MHz, and low frequency drift common-base  
VHF oscillator applications with high output levels for driving  
FET mixers. Sourced from Process 47.  
Absolute Maximum Ratings*  
TA = 25°C unless otherwise noted  
Symbol  
Parameter  
Value  
Units  
VCEO  
VCBO  
VEBO  
IC  
Collector-Emitter Voltage  
Collector-Base Voltage  
Emitter-Base Voltage  
25  
30  
V
V
3.0  
V
Collector Current - Continuous  
50  
mA  
°C  
Operating and Storage Junction Temperature Range  
-55 to +150  
TJ, Tstg  
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.  
NOTES:  
1) These ratings are based on a maximum junction temperature of 150 degrees C.  
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.  
Thermal Characteristics  
TA = 25°C unless otherwise noted  
Symbol  
Characteristic  
Max  
Units  
MPSH11  
*MMBTH11  
PD  
Total Device Dissipation  
Derate above 25°C  
Thermal Resistance, Junction to Case  
350  
2.8  
125  
225  
1.8  
mW  
mW/°C  
°C/W  
Rθ  
JC  
Rθ  
Thermal Resistance, Junction to Ambient  
357  
556  
°C/W  
JA  
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."  
1997 Fairchild Semiconductor Corporation  

MPSH11 替代型号

型号 品牌 替代类型 描述 数据表
BFS17P INFINEON

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