Datasheet > MPSH-11

MPSH-11

更新时间： 2024-10-01 12:28:11

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		晶体晶体管
页数	文件大小	规格书
8页	128K
描述
NPN RF Transistor

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中文翻译

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数据手册

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MPSH-11 数据手册

MPSH11

MMBTH11

TO-92

SOT-23

Mark: 3G

NPN RF Transistor

This device is designed for common-emitter low noise amplifier

and mixer applications with collector currents in the 100 µA to

10 mA range to 300 MHz, and low frequency drift common-

base VHF oscillator applications with high output levels for

driving FET mixers. Sourced from Process 47.

Absolute Maximum Ratings*

TA = 25°C unless otherwise noted

Symbol

Parameter

Value

Units

V_CEO

V_CBO

V_EBO

I_C

Collector-Emitter Voltage

Collector-Base Voltage

3.0

Emitter-Base Voltage

Collector Current - Continuous

Operating and Storage Junction Temperature Range

-55 to +150

T_J, T_stg

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES:

1) These ratings are based on a maximum junction temperature of 150 degrees C.

2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Thermal Characteristics

TA = 25°C unless otherwise noted

Symbol

Characteristic

Max

Units

MPSH11

*MMBTH11

P_D

Total Device Dissipation

Derate above 25 C

350

2.8

225

1.8

mW/ C

Thermal Resistance, Junction to Case

125

R_θ

C/W

Thermal Resistance, Junction to Ambient

357

556

R_θ

C/W

*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."

MPSH11/MMBTH11, Rev.

2002 Fairchild Semiconductor Corporation

12 3 4 5 6 7 8

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