Datasheet > MPS2907A

MPS2907A

更新时间： 2024-09-25 10:48:51

品牌	Logo	应用领域
SECOS		晶体晶体管
页数	文件大小	规格书
5页	187K
描述
General Purpose Transistor

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中文翻译

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数据手册

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MPS2907A 数据手册

MPS2907A

PNP Silicon

General Purpose Transistor

Elektronische Bauelemente

RoHS Compliant Product

A suffix of "-C" specifies halogen & lead-free

TO-92

COLLECTOR

BASE

ƔFEATURES

Epitaxial Planar Die Construction

EMITTER

Complementary NPN Type Available

(MPS2222A)

Ideal for Medium Power Amplification and Switching

ƔMAXIMUM RATINGS

RATING

SYMBOL

V_CEO

V_CBO

V_EBO

VALUE

-60

UNIT

Collector - Emitter Voltage

Collector - Base Voltage

Emitter - Base Voltage

-5.0

Collector Current - Continuous

Total Device Dissipation @ T_A= 25 к

Derate Above 25 к

Total Device Dissipation @ T_C= 25 к

Derate Above 25 к

I_C

-600

625

5.0

1.5

mW / к

Watts

mW / к

P_D

Operating and Storage Junction Temperature Range

T_J, T_STG

-55 ~ +150

ƔTHERMAL CHARACTERISTICS

CHARACTERISTIC

Thermal Resistance, Junction to Ambient

Thermal Resistance, Junction to Case

SYMBOL

R_șJA

R_șJC

MAX.

200

83.3

UNIT

к / W

ƔELECTRICAL CHARACTERISTICS (T_A= 25 ^кunless otherwise noted)

CHARACTERISTIC

SYMBOL

Min.

Max.

UNIT

OFF CHARACTERISTICS

Collector - Emitter Breakdown Voltage⁽¹⁾

(I_C= -10 mA, I_B= 0)

Collector - Base Breakdown Voltage

(I_C= -10 µA, I_E= 0)

Emitter - Base Breakdown Voltage

(I_E= -10 µA, I_C= 0)

Collector Cut-off Current

V_(BR)CEO

V_(BR)CBO

V_(BR)EBO

I_CEX

-40

-60

-5.0

-50

(V_CE= -50 V, V_EB(oFF)= -0.5 V)

Collector Cut-off Current

I_CBO

µA

(V_CB= -50 V, I_E= 0)

(V_CB= -50 V, I_E= 0, T_A= 150 к)

Emitter Cut-off Current

(V_EB= -3.0 V, I_C= 0)

Collector Cut-off Current

(V_CE= -35 V)

Base Cut-off Current

(V_CE= -30 V, V_EB(oFF)= -0.5 V)

1. Pulse Test: Pulse Width 300 µs, Duty Cycle 2.0 %.

-0.10

-15

I_EBO

I_CEO

I_BEX

-100

-50

http://www.SeCoSGmbH.com/

01-Jun-2002 Rev. A

Any changing of specification will not be informed individual

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