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MPLAD30KP58AE3/TR PDF预览

MPLAD30KP58AE3/TR

更新时间： 2024-11-19 18:20:11
品牌 Logo 应用领域
美高森美 - MICROSEMI 局域网二极管
页数 文件大小 规格书
4页 336K
描述
Trans Voltage Suppressor Diode, 30000W, 58V V(RWM), Unidirectional, 1 Element, Silicon, ROHS COMPLIANT, PLASTIC PACKAGE-1

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中文翻译

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MPLAD30KP58AE3/TR 技术参数

是否Rohs认证： 符合生命周期：Active
包装说明：R-PSSO-G1Reach Compliance Code：compliant
ECCN代码：EAR99HTS代码：8541.10.00.50
风险等级：5.47其他特性：HIGH RELIABILITY
最大击穿电压：71.2 V最小击穿电压：64.4 V
击穿电压标称值：67.8 V外壳连接：CATHODE
最大钳位电压：93.6 V配置：SINGLE
二极管元件材料：SILICON二极管类型：TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 代码：R-PSSO-G1JESD-609代码：e3
湿度敏感等级：1最大非重复峰值反向功率耗散：30000 W
元件数量：1端子数量：1
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：NOT SPECIFIED
极性：UNIDIRECTIONAL最大功率耗散：2.5 W
认证状态：Not Qualified最大重复峰值反向电压：58 V
子类别：Transient Suppressors表面贴装：YES
技术：AVALANCHE端子面层：MATTE TIN
端子形式：GULL WING端子位置：SINGLE
处于峰值回流温度下的最长时间：NOT SPECIFIEDBase Number Matches：1

MPLAD30KP58AE3/TR 数据手册

 浏览型号MPLAD30KP58AE3/TR的Datasheet PDF文件第2页浏览型号MPLAD30KP58AE3/TR的Datasheet PDF文件第3页浏览型号MPLAD30KP58AE3/TR的Datasheet PDF文件第4页 
TECHNICAL DATA SHEET  
Gort Road Business Park, Ennis, Co. Clare, Ireland.  
Tel: +353 (0) 65 6840044, Fax: +353 (0) 65 6822298  
6 Lake Street, Lawrence, MA 01841  
Tel: 1-800-446-1158 / (978) 794-1666, Fax: (978) 6890803  
Website: http://www.microsemi.com  
- High Reliability controlled devices  
SURFACE MOUNT 30,000 W  
Transient Voltage Suppressor  
- Unidirectional (A) and Bidirectional (CA) construction  
- Selections for 14 to 400 V standoff voltages (VWM  
- Fast response  
)
LEVELS  
M, MA, MX, MXL  
DEVICES  
MPLAD30KP14A thru MPLAD30KP400CA, e3  
FEATURES  
.
.
.
.
High reliability controlled devices with fabrication and assembly lot traceability  
100 % surge tested devices  
Low profile surface mount  
Optional upscreening available by replacing the M prefix with MA, MX or MXL. These prefixes  
specify various screening and conformance inspection options based on MIL-PRF-19500.  
Refer to MicroNote 129 for more details on the screening options.  
.
.
.
.
Suppresses transients up to 30 kW @ 10/1000 µs and 200 kW @ 8/20 µs (see Figure 1)  
Moisture classification is Level 1 with no dry pack required per IPC/JEDEC J-STD-020B  
RoHS compliant devices available by adding an “e3” suffix  
3σ lot norm screening performed on Standby Current ID  
APPLICATIONS / BENEFITS  
.
.
.
Protection from switching transients and induced RF  
Protection from ESD, and EFT per IEC 61000-4-2 and IEC 61000-4-4  
Secondary lightning protection per IEC 61000-4-5 with 42 Ohms source impedance:  
o
o
o
Class 1,2,3,4,5: MPLAD30KP14A to 400CA  
Class 5: MPLAD30KP14A to 400CA (short distance)  
Class 5: MPLAD30KP14A to 220CA (long distance)  
.
.
Secondary lightning protection per IEC 61000-4-5 with 12 Ohms source impedance:  
o
o
Class 1,2,3: MPLAD30KP14A to 400CA  
Class 4: MPLAD30KP14A to 220CA  
Secondary lightning protection per IEC 61000-4-5 with 2 Ohms source impedance:  
o
o
o
Class 2: MPLAD30KP10A to 400CA  
Class 3: MPLAD30KP14A to 220CA  
Class 4: MPLAD30KP14A to 110CA  
MAXIMUM RATINGS  
.
Peak Pulse Power dissipation at 25 °C: 30,000 watts at 10/1000 μs (also see Figures 1 and 2)  
with impulse repetition rate (duty factor) of 0.05 % or less  
.
.
.
tclamping (0 volts to VBR min.): < 100 ps theoretical for unidirectional and < 5 ns for bidirectional  
Operating and Storage temperature: -65 ºC to +150 ºC  
Thermal resistance: 0.5 ºC/W junction to case or 50ºC/W junction to ambient when mounted  
on FR4 PC board with recommended mounting pad (see page 2)  
.
Steady-State Power dissipation: 250 watts at TC = 25 °C or 2.5 watts at TA = 25 °C when  
mounted on FR4 PC board as described for thermal resistance  
.
.
Forward Surge Voltage: 1500 Amps (theoretical) at 8.3mS half-sine wave (unidirectional  
devices only)  
Solder temperatures: 260 ºC for 10 s (maximum)  
RF01005 Rev D, November 2010  
High Reliability Product Group  
Page 1 of 4  
1234

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与MPLAD30KP58AE3/TR相关器件

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MPLAD30KP58ATR MICROSEMI

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MPLAD30KP58CA/TR MICROSEMI

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 		Trans Voltage Suppressor Diode, 30000W, 58V V(RWM), Bidirectional, 1 Element, Silicon
MPLAD30KP58CAE3 MICROSEMI

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 		Trans Voltage Suppressor Diode, 30000W, 58V V(RWM), Bidirectional, 1 Element, Silicon, ROH
MPLAD30KP58CAE3/TR MICROSEMI

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 		Trans Voltage Suppressor Diode, 30000W, 58V V(RWM), Bidirectional, 1 Element, Silicon, ROH
MPLAD30KP58CAE3TR MICROSEMI

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 		30000W, BIDIRECTIONAL, SILICON, TVS DIODE, ROHS COMPLIANT, PLASTIC PACKAGE-1
MPLAD30KP60A/TR MICROSEMI

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 		Trans Voltage Suppressor Diode, 30000W, 60V V(RWM), Unidirectional, 1 Element, Silicon, PL
MPLAD30KP60AE3/TR MICROSEMI

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 		Trans Voltage Suppressor Diode, 30000W, 60V V(RWM), Unidirectional, 1 Element, Silicon, RO
MPLAD30KP60AE3TR MICROSEMI

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 		30000W, UNIDIRECTIONAL, SILICON, TVS DIODE, ROHS COMPLIANT, PLASTIC PACKAGE-1
MPLAD30KP60CA/TR MICROSEMI

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 		Trans Voltage Suppressor Diode, 30000W, 60V V(RWM), Bidirectional, 1 Element, Silicon, PLA

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