Datasheet > MP4T856

MP4T856

更新时间： 2024-02-09 01:59:05

品牌	Logo	应用领域
MPLUSE		晶体晶体管
页数	文件大小	规格书
9页	104K
描述
Moderate Power High fT NPN Silicon Transistor

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MP4T856 数据手册

Moderate Power High f

NPN Silicon Transistor

MP4T856 Series

Package Outline

SOT-23

Features

· High Output Power

- 16 dBm P

- 10 dBm P

· High Gain Bandwidth Product

@ 1 GHz

@ 2 GHz

1dB

· 8-9 GHz f

· High Power Gain

- |S

|²= 15 dB @ 1 GHz

21E

|²= 9 dB @ 2 GHz

· Low Noise Figure

- 1.5 dB @ 1.5 GHz

Description

SOT-143

The MP4T856 series of moderate power NPN

transistors provides low noise at 5-10 volts operating

voltage. These transistors are designed to optimize

gain at moderate collector currents (20 - 60 mA).

They are useful as moderate power (+23-24 dBm) low

noise amplifiers at 0.5-2 GHz or as low noise VCO

transistors from 100 MHz to 5.0 GHz.

These inexpensive transistors are available in the SOT-

23 (MP4T85633), the SOT-143 (MP4T85639), and the

Micro-X (MP4T85635) packages.

They are also

Chip

available as chips (MP4T85600) for hybrid circuits. The

plastic packages SOT-23 and SOT-143 are normally

supplied on tape and reel.

Absolute Maximum Ratings¹

Parameter

Absolute Maximum

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

20 V

12 V

3.0 V

100 mA

Junction Temperature

Chip or Ceramic Package

Plastic Package

+200°C

+150°C

Storage Temperature

Chip or Ceramic Package

Plastic Package

Power Dissipation (die)

1. See power derating curves.

-65°C to +200°C

1200 mW¹

Specification Subject to Change Without Notice

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