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MP4TD0300W PDF预览

MP4TD0300W

更新时间: 2024-01-22 19:01:00
品牌 Logo 应用领域
MPLUSE 放大器
页数 文件大小 规格书
3页 124K
描述
Silicon Bipolar MMIC Cascadable Amplifier

MP4TD0300W 数据手册

 浏览型号MP4TD0300W的Datasheet PDF文件第2页浏览型号MP4TD0300W的Datasheet PDF文件第3页 
M-Pulse Microwave  
Silicon Bipolar MMIC  
Cascadable Amplifier  
MP4TD0300  
V4.00  
Chip Outline Drawing1,2,3,4  
Features  
RF Input  
Optional +12 Volt  
Optional +15 Volt  
Cascadable 50Gain Block  
3dB Bandwidth: DC to 2.0 GHz  
12 dB Typical Gain @ 1.0 GHz  
Unconditionally Stable (k>1)  
Description  
M-Pulse's MP4TD0300 is a high performance silicon  
bipolar MMIC chip. The MP4TD0300 is designed for  
use where a general purpose 50gain block is required.  
Typical applications include narrow and wide band IF  
and RF amplifiers in industrial and military applications.  
µ
375  
(14.8 mil)  
The MP4TD0300 is fabricated using a 10 GHz f silicon  
T
bipolar technology that features gold metalization and IC  
passivation for increased performance and reliability.  
Ground  
Optional RF Output & + 5 Volts*  
µ (14.8 mil)  
375  
Notes: (unless otherwise specified)  
TYPICAL POWER GAIN vs FREQUENCY  
1. Chip Thickness is 120 µm; 4.8 mils  
14  
2. Bond Pads are 40 µm; 1.6 mils typical in diameter  
3. Output Contact & +DC Voltage Is Normally Made On  
Backside Of Chip At Die Attach  
12  
Id=35mA  
10  
4. Tolerance:µm .xx = ±.13; mil .x = ±.5  
8
6
4
Ordering Information  
Model No.  
MP4TD0300G  
MP4TD0300W  
Type of Carrier  
GEL PACK  
Gain Flat to DC  
2
Waffle Pack  
0
0.01  
0.1  
1
10  
FREQUENCY (GHz)  
Electrical Specifications @ TA = +25°C, I = 35 mA; Z = 50Ω  
d
0
Symbol  
Parameters  
Test Conditions  
Units  
dB  
Min.  
Typ.  
13.0  
+ 1.0  
2.0  
Max.  
2
)
Gp  
Gp  
f3dB  
f = 0.1 GHz  
f = 0.1 to 1.5 GHz  
-
-
-
Power Gain ( S  
Gain Flatness  
3 dB Bandwidth  
Input SWR  
21  
dB  
-
-
GHz  
-
-
-
SWRin  
SWRout  
P1dB  
f = 0.1 to 3.0 GHz  
f = 0.1 to 2.0 GHz  
f = 1.0 GHz  
f = 1.0 GHz  
f = 1.0 GHz  
f = 1.0 GHz  
-
-
1.4  
-
Output SWR  
-
-
1.4  
-
Output Power @ 1dB Gain Compression  
50 Noise Figure  
dBm  
dB  
-
10.0  
5.5  
-
NF  
-
-
IP3  
Third Order Intercept Point  
Group Delay  
dBm  
ps  
-
-
23.0  
125  
5.0  
-
-
tD  
Vd  
Device Voltage  
V
4.5  
-
5.5  
-
dV/dT  
Device Voltage Temperature Coefficient  
-
-8.0  
mV/°C  
M-Pulse MicrowavSepecific_at_ion_S_u_b_je_ct_to_C_h_an_g_e_W_it_ho_u_t N_o_tic_e_____________________________________________________________  
1
North America: Tel. (408) 432-1480  
Fax (408) 432-3440  

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