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MP4T85639 PDF预览

MP4T85639

更新时间: 2024-01-19 20:27:26
品牌 Logo 应用领域
MPLUSE 晶体晶体管光电二极管放大器
页数 文件大小 规格书
9页 104K
描述
Moderate Power High fT NPN Silicon Transistor

MP4T85639 技术参数

生命周期:Contact Manufacturer包装说明:SMALL OUTLINE, R-PDSO-G4
针数:4Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.72
Is Samacsys:N其他特性:LOW NOISE
最大集电极电流 (IC):0.1 A基于收集器的最大容量:0.75 pF
集电极-发射极最大电压:12 V配置:SINGLE
最高频带:L BANDJESD-30 代码:R-PDSO-G4
元件数量:1端子数量:4
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:NPN
表面贴装:YES端子形式:GULL WING
端子位置:DUAL晶体管应用:AMPLIFIER
晶体管元件材料:SILICON标称过渡频率 (fT):7000 MHz
Base Number Matches:1

MP4T85639 数据手册

 浏览型号MP4T85639的Datasheet PDF文件第2页浏览型号MP4T85639的Datasheet PDF文件第3页浏览型号MP4T85639的Datasheet PDF文件第4页浏览型号MP4T85639的Datasheet PDF文件第5页浏览型号MP4T85639的Datasheet PDF文件第6页浏览型号MP4T85639的Datasheet PDF文件第7页 
Moderate Power High f  
NPN Silicon Transistor  
T
MP4T856 Series  
Package Outline  
SOT-23  
Features  
· High Output Power  
- 16 dBm P  
- 10 dBm P  
· High Gain Bandwidth Product  
@ 1 GHz  
@ 2 GHz  
1dB  
1dB  
· 8-9 GHz f  
T
· High Power Gain  
- |S  
- |S  
|2 = 15 dB @ 1 GHz  
21E  
21E  
|2 = 9 dB @ 2 GHz  
· Low Noise Figure  
- 1.5 dB @ 1.5 GHz  
Description  
SOT-143  
The MP4T856 series of moderate power NPN  
transistors provides low noise at 5-10 volts operating  
voltage. These transistors are designed to optimize  
gain at moderate collector currents (20 - 60 mA).  
They are useful as moderate power (+23-24 dBm) low  
noise amplifiers at 0.5-2 GHz or as low noise VCO  
transistors from 100 MHz to 5.0 GHz.  
These inexpensive transistors are available in the SOT-  
23 (MP4T85633), the SOT-143 (MP4T85639), and the  
Micro-X (MP4T85635) packages.  
They are also  
Chip  
available as chips (MP4T85600) for hybrid circuits. The  
plastic packages SOT-23 and SOT-143 are normally  
supplied on tape and reel.  
Absolute Maximum Ratings1  
Parameter  
Absolute Maximum  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current  
20 V  
12 V  
3.0 V  
100 mA  
Junction Temperature  
Chip or Ceramic Package  
Plastic Package  
+200°C  
+150°C  
Storage Temperature  
Chip or Ceramic Package  
Plastic Package  
Power Dissipation (die)  
1. See power derating curves.  
-65°C to +200°C  
-65°C to +200°C  
1200 mW1  
Specification Subject to Change Without Notice  
M-Pulse Microwave____________________________________________________________________________________  
1
576 Charcot Avemue, San Jose, California 95131  
Tel (408) 432-1480  
Fax (408)) 432-3440  

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