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MP4TD0470 PDF预览

MP4TD0470

更新时间： 2024-09-22 10:49:55
品牌 Logo 应用领域
MPLUSE 放大器
页数 文件大小 规格书
3页 48K
描述
Silicon Bipolar MMIC Cascadable Amplifier

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中文翻译

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MP4TD0470 数据手册

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M-Pulse Microwave  
Silicon Bipolar MMIC  
Cascadable Amplifier  
MP4TD0470  
Gold-Ceramic Microstrip Package Outline1,2  
Features  
.040  
• Cascadable 50Ω Gain Block  
• 3dB Bandwidth: DC to 3.0 GHz  
• 9.0 dB Typical Gain @ 1.0 GHz  
• Unconditionally Stable (k>1)  
• Hermetic Gold-Ceramic Microstrip Package  
• Tape and Reel Packaging Available  
1,02  
4
GND  
.020  
0,51  
RF OUT  
AND BIAS  
RF INPUT  
1
Description  
3
M-Pulse's MP4TD0470 is a high performance silicon  
bipolar MMIC housed in a hermetic high reliability  
package for surface mount usage. The MP4TD0470 is  
useful where a general purpose 50Ω gain block with  
moderate (+16dBm) gain compression is required.  
Typical applications include narrow and wide band IF  
and RF amplifiers in industrial and military applications.  
GND  
2
.070  
1,78  
.035  
0,89  
.004 ±.002  
0,1±0,05  
The MP4TD0470 is fabricated using a 10 GHz f silicon  
T
bipolar technology that features gold metalization and IC  
passivation for increased performance and reliability.  
.495 ±.030  
12,57 ±0,76  
Notes: (unless otherwise specified)  
1. Dimensions are in / mm  
TYPICAL POWER GAIN vs FREQUENCY  
10  
2. Tolerance: in .xxx = ±.005; mm .xx = ±.13  
9
Id = 50 mA  
8
7
6
5
4
3
2
Pin Configuration  
Pin Number  
Pin Description  
RF Input  
AC/DC Ground  
1
2 & 4  
3
RF Output and DC Bias  
1
0
Gain Flat to D C  
0.1  
1
10  
Ordering Information  
Model No.  
FREQUENCY (GH z)  
Package  
Hermetic Ceramic  
Tape and Reel  
MP4TD0470  
MP4TD0470T  
Electrical Specifications @ TA = +25°C, I = 50 mA, Z = 50Ω  
d
0
Symbol  
Parameters  
Test Conditions  
Units  
dB  
dB  
GHz  
-
-
dBm  
dB  
dBm  
ps  
Min.  
8.0  
-
-
-
-
-
-
Typ.  
9.0  
±0.6  
3.0  
1.6  
1.7  
12.5  
6.3  
25.5  
125  
5.25  
-8.0  
Max.  
9.5  
±1.0  
-
-
-
-
-
2
Gp  
Power Gain (⏐S21⏐ )  
Gain Flatness  
3 dB Bandwidth  
Input SWR  
f = 0.1 GHz  
f = 0.1 to 2.0 GHz  
-
f = 0.1 to 3.0 GHz  
f = 0.1 to 3.0 GHz  
f = 1.0 GHz  
f = 1.0 GHz  
f = 1.0 GHz  
f = 1.0 GHz  
-
ΔGp  
f3 dB  
SWRin  
SWRout  
P1dB  
NF  
IP3  
tD  
Vd  
dV/dT  
Output SWR  
Output Power @ 1 dB Gain Compression  
50 Ω Noise Figure  
Third Order Intercept Point  
Group Delay  
-
-
-
4.75  
-
-
5.75  
-
Device Voltage  
V
Device Voltage Temperature Coefficient  
-
mV/°C  
Specification Subject to Change Without Notice  
M-Pulse Microwave __________________________________________________________________________________  
1
PH (408) 432-1480 FX (408) 432-3440  
123

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