MMT05B350T3
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
−40 to +125
+175
Unit
°C
Operating Temperature Range Blocking or Conducting State
T
J1
Overload Junction Temperature − Maximum Conducting State Only
Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds
T
J2
°C
T
L
260
°C
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
Devices are bidirectional. All electrical parameters apply to forward and reverse polarities.
Characteristics
Breakover Voltage (Both polarities)
Symbol
Min
Typ
Max
Unit
V
(BO)
V
(dv/dt = 100 V/ms, I = 1.0 A, Vdc = 1000 V)
(+65°C)
−
−
−
−
400
412
SC
Breakover Voltage (Both polarities)
V
(BO)
V
(f = 60 Hz, I = 1.0 A(rms), V = 1000 V(rms),
−
−
400
SC
OC
R = 1.0 kW, t = 0.5 cycle) (Note 3)
I
(+65°C)
−
−
−
−
412
−
Breakover Voltage Temperature Coefficient
dV
/dT
0.12
350
V/°C
V
(BO)
J
Breakdown Voltage (I
= 1.0 mA) Both polarities
V
−
(BR)
(BR)
Off State Current (V = 50 V) Both polarities
I
I
−
−
−
−
2.0
5.0
mA
D1
D1
D2
Off State Current (V = V ) Both polarities
D2
DM
On−State Voltage (I = 1.0 A)
V
T
−
1.6
3.0
V
T
(PW ≤ 300 ms, Duty Cycle ≤ 2%) (Note 3)
Breakover Current (f = 60 Hz, V
Both polarities
= 1000 V(rms), R = 1.0 kW)
I
−
475
−
mA
mA
V/ms
pF
DM
S
BO
Holding Current (Both polarities)
= 500 V; I (Initiating Current) = "1.0 A
(Note 3)
(+65°C)
I
H
150
130
270
−
−
−
V
S
T
Critical Rate of Rise of Off−State Voltage
dv/dt
2000
−
−
(Linear waveform, V = Rated V , T = 25°C)
D
BR
J
Capacitance (f = 1.0 MHz, 50 Vdc, 1.0 V rms Signal)
Capacitance (f = 1.0 MHz, 2.0 Vdc, 1.0 V rms Signal)
C
−
−
14
27
18
30
O
3. Measured under pulse conditions to reduce heating.
Voltage Current Characteristic of TSPD
(Bidirectional Device)
+ Current
Symbol
Parameter
V
TM
I , I
D1 D2
Off State Leakage Current
Off State Blocking Voltage
Breakdown Voltage
Breakover Voltage
Breakover Current
Holding Current
V
(BO)
V
V
V
, V
D2
D1
I
H
BR
BO
I
(BO)
I
I
D2
D1
I
I
BO
+ Voltage
H
V
V
D2
V
(BR)
D1
V
TM
On State Voltage
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