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MMT05B350T3G PDF预览

MMT05B350T3G

更新时间: 2024-01-29 01:59:40
品牌 Logo 应用领域
安森美 - ONSEMI 光电二极管高压
页数 文件大小 规格书
5页 63K
描述
Thyristor Surge Protectors High Voltage Bidirectional TSPD

MMT05B350T3G 数据手册

 浏览型号MMT05B350T3G的Datasheet PDF文件第1页浏览型号MMT05B350T3G的Datasheet PDF文件第3页浏览型号MMT05B350T3G的Datasheet PDF文件第4页浏览型号MMT05B350T3G的Datasheet PDF文件第5页 
MMT05B350T3  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
40 to +125  
+175  
Unit  
°C  
Operating Temperature Range Blocking or Conducting State  
T
J1  
Overload Junction Temperature − Maximum Conducting State Only  
Maximum Lead Temperature for Soldering Purposes 1/8from Case for 10 Seconds  
T
J2  
°C  
T
L
260  
°C  
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)  
J
Devices are bidirectional. All electrical parameters apply to forward and reverse polarities.  
Characteristics  
Breakover Voltage (Both polarities)  
Symbol  
Min  
Typ  
Max  
Unit  
V
(BO)  
V
(dv/dt = 100 V/ms, I = 1.0 A, Vdc = 1000 V)  
(+65°C)  
400  
412  
SC  
Breakover Voltage (Both polarities)  
V
(BO)  
V
(f = 60 Hz, I = 1.0 A(rms), V = 1000 V(rms),  
400  
SC  
OC  
R = 1.0 kW, t = 0.5 cycle) (Note 3)  
I
(+65°C)  
412  
Breakover Voltage Temperature Coefficient  
dV  
/dT  
0.12  
350  
V/°C  
V
(BO)  
J
Breakdown Voltage (I  
= 1.0 mA) Both polarities  
V
(BR)  
(BR)  
Off State Current (V = 50 V) Both polarities  
I
I
2.0  
5.0  
mA  
D1  
D1  
D2  
Off State Current (V = V ) Both polarities  
D2  
DM  
On−State Voltage (I = 1.0 A)  
V
T
1.6  
3.0  
V
T
(PW 300 ms, Duty Cycle 2%) (Note 3)  
Breakover Current (f = 60 Hz, V  
Both polarities  
= 1000 V(rms), R = 1.0 kW)  
I
475  
mA  
mA  
V/ms  
pF  
DM  
S
BO  
Holding Current (Both polarities)  
= 500 V; I (Initiating Current) = "1.0 A  
(Note 3)  
(+65°C)  
I
H
150  
130  
270  
V
S
T
Critical Rate of Rise of Off−State Voltage  
dv/dt  
2000  
(Linear waveform, V = Rated V , T = 25°C)  
D
BR  
J
Capacitance (f = 1.0 MHz, 50 Vdc, 1.0 V rms Signal)  
Capacitance (f = 1.0 MHz, 2.0 Vdc, 1.0 V rms Signal)  
C
14  
27  
18  
30  
O
3. Measured under pulse conditions to reduce heating.  
Voltage Current Characteristic of TSPD  
(Bidirectional Device)  
+ Current  
Symbol  
Parameter  
V
TM  
I , I  
D1 D2  
Off State Leakage Current  
Off State Blocking Voltage  
Breakdown Voltage  
Breakover Voltage  
Breakover Current  
Holding Current  
V
(BO)  
V
V
V
, V  
D2  
D1  
I
H
BR  
BO  
I
(BO)  
I
I
D2  
D1  
I
I
BO  
+ Voltage  
H
V
V
D2  
V
(BR)  
D1  
V
TM  
On State Voltage  
http://onsemi.com  
2
 

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