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MMSD301T1G PDF预览

MMSD301T1G

更新时间: 2024-02-21 07:02:46
品牌 Logo 应用领域
安森美 - ONSEMI 整流二极管测试光电二极管功效PC
页数 文件大小 规格书
5页 121K
描述
SOD-123 Schottky Barrier Diodes

MMSD301T1G 技术参数

是否无铅:不含铅生命周期:Active
包装说明:SOD-123, 2 PIN针数:2
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.60Factory Lead Time:1 week
风险等级:1.45Samacsys Confidence:3
Samacsys Status:Released2D Presentation:https://componentsearchengine.com/2D/0T/266659.3.2.png
Schematic Symbol:https://componentsearchengine.com/symbol.php?partID=266659PCB Footprint:https://componentsearchengine.com/footprint.php?partID=266659
3D View:https://componentsearchengine.com/viewer/3D.php?partID=266659Samacsys PartID:266659
Samacsys Image:https://componentsearchengine.com/Images/9/MMSD301T1G.jpgSamacsys Thumbnail Image:https://componentsearchengine.com/Thumbnails/3/MMSD301T1G.jpg
Samacsys Pin Count:2Samacsys Part Category:Diode
Samacsys Package Category:Small Outline DiodeSamacsys Footprint Name:SOD-123
Samacsys Released Date:2017-05-13 03:49:17Is Samacsys:N
应用:EFFICIENCY最小击穿电压:30 V
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):0.6 V
JESD-30 代码:R-PDSO-G2JESD-609代码:e3
湿度敏感等级:1元件数量:1
相数:1端子数量:2
最高工作温度:125 °C最低工作温度:-55 °C
最大输出电流:0.2 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
最大功率耗散:0.225 W认证状态:Not Qualified
参考标准:AEC-Q101最大重复峰值反向电压:30 V
最大反向电流:0.2 µA反向测试电压:25 V
表面贴装:YES技术:SCHOTTKY
端子面层:Tin (Sn)端子形式:GULL WING
端子位置:DUALBase Number Matches:1

MMSD301T1G 数据手册

 浏览型号MMSD301T1G的Datasheet PDF文件第2页浏览型号MMSD301T1G的Datasheet PDF文件第3页浏览型号MMSD301T1G的Datasheet PDF文件第4页浏览型号MMSD301T1G的Datasheet PDF文件第5页 
MMSD301T1G,  
MMSD701T1G  
SOD-123 Schottky  
                   
Barrier Diodes  
The MMSD301T1, and MMSD701T1 devices are spin--offs of our  
popular MMBD301LT1, and MMBD701LT1 SOT--23 devices. They  
are designed for high--efficiency UHF and VHF detector applications.  
Readily available to many other fast switching RF and digital  
applications.  
http://onsemi.com  
1
2
Cathode  
Anode  
Features  
Extremely Low Minority Carrier Lifetime  
Very Low Capacitance  
Low Reverse Leakage  
These Devices are Pb--Free, Halogen Free/BFR Free and are RoHS  
SOD--123  
CASE 425  
STYLE 1  
Compliant  
MAXIMUM RATINGS  
Rating  
Reverse Voltage  
Symbol  
Value  
Unit  
MARKING DIAGRAM  
MMSD301T1  
MMSD701T1  
V
30  
70  
Vdc  
R
Forward Current (DC) Continous  
Forward Power Dissipation  
I
200  
225  
mA  
F
XXX MG  
P
mW  
1
F
G
T
= 25C  
A
Junction Temperature  
T
-- 55 to +125  
-- 55 to +150  
C  
C  
J
xx  
= Specific Device Code  
XT = MMSD301T1  
XH = MMSD701T1  
= Date Code  
Storage Temperature Range  
T
stg  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
M
G
= Pb--Free Package  
(Note: Microdot may be in either location)  
ORDERING INFORMATION  
Device  
Package  
Shipping  
MMSD301T1G  
SOD--123  
(Pb--Free)  
3000 Tape & Reel  
3000 Tape & Reel  
MMSD701T1G  
SOD--123  
(Pb--Free)  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
Semiconductor Components Industries, LLC, 2010  
1
Publication Order Number:  
October, 2010 -- Rev. 5  
MMSD301T1/D  

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