Datasheet > MMBTA44_15

MMBTA44_15

更新时间： 2022-10-12 16:47:30

品牌	Logo	应用领域
友顺 - UTC		高压
页数	文件大小	规格书
4页	196K
描述
HIGH VOLTAGE TRANSISTORS

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中文翻译

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数据手册

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MMBTA44_15 数据手册

MMBTA44/45

NPN SILICON TRANSISTOR

ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

V_CBO

RATINGS

500

UNIT

MMBTA44

Collector-Base Voltage

Collector-Emitter Voltage

MMBTA45

MMBTA44

MMBTA45

400

V_CEO

350

Emitter-Base Voltage

Collector Current

V_EBO

I_C

300

Ta=25°C

T_C=25°C

350

Power Dissipation

P_D

1.5

Junction Temperature

Storage Temperature

T_J

+150

-40 ~ +150

°C

T_STG

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

ELECTRICAL CHARACTERISTICS

(T_J=25°C, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP MAX UNIT

Collector-Base Breakdown

Voltage

MMBTA44

MMBTA45

500

400

350

BV_CBO

I_C=100μA, I_B=0

Collector-Emitter Breakdown MMBTA44

Voltage

BV_CEO

BV_EBO

I_C=1mA, I_B=0

MMBTA45

Emitter-Base Breakdown Voltage

Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

I_E=100μA, I_C=0

I_C=1mA, I_B=0.1mA

I_C=10mA, I_B=1mA

I_C=50mA, I_B=5mA

0.4

0.5

V_CE(SAT)

0.75

V_BE(SAT)

I_CBO

I_C10mA, I_B=1mA

V_CB=400V, I_E=0

V_CB=320V, I_E=0

V_CE=400V, I_B=0

0.75

0.1

0.5

0.1

MMBTA44

μA

Collector Cut-off Current

MMBTA45

MMBTA44

MMBTA45

Collector Cut-off Current

Emitter Cut-off Current

I_CES

V_CE=320V, I_B=0

I_EBO

h_FE1

h_FE2

h_FE3

h_FE4

V_EB=4V, I_C=0

V_CE=10V, I_C=1mA

V_CE=10V, I_C=10mA

V_CE=10V, I_C=50mA

V_CE=10V, I_C=100mA

V_CE=20V, I_C=10mA

240

DC Current Gain (Note)

Current Gain Bandwidth Product

f_T

MHz

f=100MHz

Output Capacitance

C_ob

V_CB=20V, I_E=0, f=1MHz

Note: Pulse test: P_W<300μs, Duty Cycle<2%

UNISONIC TECHNOLOGIES CO., LTD

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