MM74C89

更新时间： 2024-02-01 10:24:25

品牌	Logo	应用领域
美国国家半导体 - NSC		存储
页数	文件大小	规格书
6页	132K
描述
64-Bit TRI-STATE Random Access Read/Write Memory

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数据手册

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MM74C89 数据手册

March 1988

MM54C89/MM74C89 64-Bit TRI-STATE

Random Access Read/Write Memory

General Description

The MM54C89/MM74C89 is a 16-word by 4-bit random ac-

cess read/write memory. Inputs to the memory consist of

four address lines, four data input lines, a write enable line

and a memory enable line. The four binary address inputs

are decoded internally to select each of the 16 possible

word locations. An internal address register latches the ad-

dress information on the positive to negative transition of

the memory enable input. The four TRI-STATE data output

lines working in conjunction with the memory enable input

provide for easy memory expansion.

Read Operation: The complement of the information which

was written into the memory is non-destructively read out at

the four outputs. This is accomplished by selecting the de-

sired address and bringing memory enable low and write

enable high.

When the device is writing or disabled the output assumes a

TRI-STATE (Hi-z) condition.

Features

Wide supply voltage range

Guaranteed noise margin

High noise immunity

Low power

3.0V to 15V

1.0V

Address Operation: Address inputs must be stable t pri-

or to the positive to negative transition of memory enable. It

is thus not necessary to hold address information stable for

0.45 V

(typ.)

fan out of 2

driving 74L

more than t after the memory is enabled (positive to neg-

ative transition of memory enable).

TTL compatibility

Low power consumption

Fast access time

100 nW/package (typ.)

Note: The timing is different than the DM7489 in that a positive to negative

transition of the memory enable must occur for the memory to be

selected.

130 ns (typ.) at V

10V

TRI-STATE output

Write Operation: Information present at the data inputs is

written into the memory at the selected address by bringing

write enable and memory enable low.

Logic and Connection Diagrams

Dual-In-Line Package

TL/F/5888–2

Top View

Order Number MM54C89

or MM74C89

TL/F/5888–1

TRI-STATEÉ is a registered trademark of National Semiconductor Corporation.

1995 National Semiconductor Corporation

TL/F/5888

RRD-B30M105/Printed in U. S. A.

12 3 4 5 6

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与MM74C89相关器件

型号	品牌	获取价格	描述	数据表
MM74C89J	NSC	获取价格	64-Bit TRI-STATE Random Access Read/Write Memory
MM74C89J	ROCHESTER	获取价格	Random Access Read / Write Memory Wide supply voltage range 3.0V ro 15V
MM74C89J/A+	NSC	获取价格	IC,SRAM,16X4,CMOS,DIP,16PIN,CERAMIC
MM74C89N	ROCHESTER	获取价格	Random Access Read / Write Memory Wide supply voltage range 3.0V ro 15V
MM74C89N	FAIRCHILD	获取价格	64-Bit 3-STATE Random Access Read/Write Memory
MM74C89N	NSC	获取价格	64-Bit TRI-STATE Random Access Read/Write Memory
MM74C90	FAIRCHILD	获取价格	4-Bit Decade Counter 4-Bit Binary Counter
MM74C90_02	FAIRCHILD	获取价格	4-Bit Decade Counter
MM74C901	NSC	获取价格	Hex Inverting TTL, Non-Inverting TTL, Inverting CMOS, Non-Inverting CMOS Buffer
MM74C901	FAIRCHILD	获取价格	Hex Inverting TTL Buffer . Hex Non-Inverting TTL Buffer