Datasheet > MM1Z5259C

MM1Z5259C

更新时间： 2024-01-12 14:59:15

品牌	Logo	应用领域
金誉半导体 - HTSEMI		二极管齐纳二极管局域网
页数	文件大小	规格书
3页	592K
描述
SILICON PLANAR ZENER DIODES

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技术参数
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MM1Z5259C 技术参数

是否无铅：	不含铅	生命周期：	Active
Reach Compliance Code：	compliant	风险等级：	5.84

MM1Z5259C 数据手册

MM1Z5231C~MM1Z5261C

SILICON PLANAR ZENER DIODES

PINNING

DESCRIPTION

Cathode

Features

Anode

• Total power dissipation: Max. 500 mW

• Small plastic package suitable for

surface mounted design

• Zener Voltage Tolerance: ± 2%

Top View

Simplified outline SOD-123 and symbol

Absolute Maximum Ratings (T_a= 25 C)

Parameter

Symbol

P_tot

Value

500

Unit

Power Dissipation

Junction Temperature

T_j

150

Storage Temperature Range

T_stg

- 55 to + 150

Characteristics at T_a= 25 C

Parameter

Symbol

R_θJA

Max.

350

Unit

Thermal Resistance Junction to Ambient Air

C/W

Forward Voltage

at I_F= 10 mA

V_F

0.9

Zener Voltage Range ¹⁾

V_ZT

Dynamic Impedance

Reverse Current

Marking

Code

Type

V_znom

at I_ZT

Z_ZT

Max. (Ω)

at I_ZT

Z_ZK

Max. (Ω)

1600

1000

750

at I_ZK

I_R

Max. (µA)

at V_R

Min. (V)

4.998

5.488

6.076

6.664

7.35

Max. (V)

5.202

5.712

6.324

6.936

7.65

MM1Z5231C

MM1Z5232C

MM1Z5234C

MM1Z5235C

MM1Z5236C

MM1Z5237C

MM1Z5239C

MM1Z5240C

MM1Z5241C

MM1Z5242C

MM1Z5243C

MM1Z5245C

MM1Z5246C

MM1Z5248C

MM1Z5250C

MM1Z5251C

MM1Z5252C

MM1Z5254C

MM1Z5256C

MM1Z5257C

MM1Z5258C

MM1Z5259C

MM1Z5260C

MM1Z5261C

5.1

5.6

6.2

6.8

7.5

8.2

9.1

0.25

500

8.036

8.918

9.8

8.364

9.282

10.2

500

6.5

105

600

10.78

11.76

12.74

14.7

11.22

12.24

13.26

15.3

600

8.4

9.1

9.9

600

9.5

8.5

7.8

9.5

8.5

7.8

600

0.5

0.1

600

15.68

17.64

19.6

16.32

18.36

20.4

600

6.2

5.6

5.2

4.6

4.2

3.8

3.4

3.2

6.2

5.6

5.2

4.6

4.2

3.8

3.4

3.2

600

21.56

23.52

26.46

29.4

22.44

24.48

27.54

30.6

600

32.34

35.28

38.22

42.14

46.06

33.66

36.72

39.78

43.86

47.94

700

800

900

2.7

1000

¹⁾V_Zis tested with pulses (20 ms)

JinYu

semiconductor

www.htsemi.com

Date:2011/05

12 3

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