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MLL821E3/TR PDF预览

MLL821E3/TR

更新时间: 2024-01-09 17:31:09
品牌 Logo 应用领域
美高森美 - MICROSEMI 二极管
页数 文件大小 规格书
3页 131K
描述
Zener Diode, 6.2V V(Z), 4.84%, 0.5W, Silicon, DO-213AA, ROHS COMPLIANT, HERMETIC SEALED, GLASS PACKAGE-2

MLL821E3/TR 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:O-LELF-R2Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.50
风险等级:5.68外壳连接:ISOLATED
配置:SINGLE二极管元件材料:SILICON
二极管类型:ZENER DIODEJEDEC-95代码:DO-213AA
JESD-30 代码:O-LELF-R2JESD-609代码:e3
元件数量:1端子数量:2
封装主体材料:GLASS封装形状:ROUND
封装形式:LONG FORM峰值回流温度(摄氏度):260
最大功率耗散:0.5 W认证状态:Not Qualified
标称参考电压:6.2 V表面贴装:YES
技术:ZENER端子面层:MATTE TIN
端子形式:WRAP AROUND端子位置:END
处于峰值回流温度下的最长时间:40电压温度Coeff-Max:0.62 mV/ °C
最大电压容差:4.84%Base Number Matches:1

MLL821E3/TR 数据手册

 浏览型号MLL821E3/TR的Datasheet PDF文件第1页浏览型号MLL821E3/TR的Datasheet PDF文件第3页 
1N821UR thru 1N829AUR-1, e3  
(or MLL821 thru MLL829-1, e3)  
6.2 & 6.55 Volt Temperature Compensated  
Surface Mount Zener Reference Diodes  
S C O T T S D A L E D I V I S I O N  
*ELECTRICAL CHARACTERISTICS @ 25oC, unless otherwise specified  
VOLTAGE  
TEMPERATURE  
STABILITY  
MAXIMUM  
REVERSE  
CURRENT  
IR @ 3 V  
MAXIMUM  
ZENER  
IMPEDANCE  
(Note 2)  
EFFECTIVE  
TEMPERATURE  
COEFFICIENT  
ZENER  
VOLTAGE  
(Note 1 and 4)  
VZ @ IZT  
ZENER  
TEST  
CURRENT  
IZT  
JEDEC  
TYPE NUMBER  
(Notes 1, 5 & 6)  
(ΔVZT MAX)  
-55oC to +100oC  
(Note 3 and 4)  
αVZ  
ZZT @ IZT  
VOLTS  
5.9 – 6.5  
5.9 – 6.5  
5.9 – 6.5  
5.9 – 6.5  
5.9 – 6.5  
5.9 – 6.5  
5.9 – 6.5  
5.9 – 6.5  
6.2 – 6.9  
5.9 – 6.5  
5.9 – 6.5  
6.2 – 6.9  
5.9 – 6.5  
5.9 – 6.5  
mA  
7.5  
7.5  
7.5  
7.5  
7.5  
7.5  
7.5  
7.5  
7.5  
7.5  
7.5  
7.5  
7.5  
7.5  
OHMS  
15  
10  
15  
15  
10  
15  
15  
10  
15  
15  
10  
15  
15  
10  
μA  
2.0  
2.0  
2.0  
2.0  
2.0  
2.0  
2.0  
2.0  
2.0  
2.0  
2.0  
2.0  
2.0  
2.0  
mV  
96  
96  
96  
48  
48  
48  
19  
19  
20  
9
%/oC  
0.01  
0.01  
0.01  
0.005  
0.005  
0.005  
0.002  
0.002  
0.002  
0.001  
0.001  
0.001  
0.0005  
0.0005  
1N821UR  
1N821AUR  
1N822UR †  
1N823UR  
1N823AUR  
1N824UR †  
1N825UR  
1N825AUR  
1N826UR  
1N827UR  
1N827AUR  
1N828UR  
1N829UR  
1N829AUR  
9
10  
5
5
*JEDEC Registered Data.  
†Double Anode; electrical specifications apply under both bias polarities.  
NOTES:  
1.  
Add a “-1” suffix for internal metallurgical bond. When ordering devices with tighter tolerances than specified for the VZ voltage nominal  
of 6.15 V, add a further hyphened suffix number % to the part number for desired tolerance, e.g. 1N827UR-1-2%, 1N829UR-1-1%,  
1N829AUR-1%, 1N829AUR-1-1%, etc.  
2.  
3.  
Zener impedance is measured by superimposing 0.75 mA ac rms on 7.5 mA dc @ 25oC.  
The maximum allowable change observed over the entire temperature range i.e., the diode voltage will not exceed the specified mV  
change at any discrete temperature between the established limits.  
4.  
5.  
Voltage measurements to be performed 15 seconds after application of dc current.  
1N821UR-1, 1N823UR-1, 1N825UR-1, 1N827UR-1, and 1N829UR-1 also have qualification to MIL-PRF-19500/159 by adding the JAN,  
JANTX, or JANTXV prefix to part numbers as well as the “-1” suffix; e.g. JANTX1N827UR-1, JANTXV1N829UR-1, etc.  
This product series has also been previously identified as the MLL821 thru MLL829A-1. This alternate name may still be used.  
6.  
Copyright © 2005  
7-18-2005 REV B  
Microsemi  
Scottsdale Division  
Page 2  
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503  

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