INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
MJ8500
DESCRIPTION
· Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 700V(Min)
·High Switching Speed
APPLICATIONS
·Designed for high-voltage ,high-speed, power switching in
inductive circuits where fall time is critical. They are partic-
ularly suited for line operated switch-mode applications.
Typical applications:
·Switching regulators
·Inverters
·Solenoid and relay drivers
·Motor controls
·Deflection circuits
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
V
VCEV
Collector-Emitter Voltage
1200
VCEO(SUS) Collector-Emitter Voltage
700
V
VEBO
IC
ICM
IB
Emitter-Base Voltage
8
V
Collector Current-Continuous
Collector Current-Peak
Base Current-Continuous
Base Current-Peak
2.5
A
5
2
A
A
IBM
PC
TJ
4
A
Collector Power Dissipation@TC=25℃
Junction Temperature
125
200
-65~200
W
℃
℃
Storage Temperature
Tstg
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Thermal Resistance,Junction to Case
1.4
℃/W
Rth j-c
isc Website:www.iscsemi.cn