Datasheet > MJ900

MJ900

更新时间： 2024-11-29 12:20:35

品牌	Logo	应用领域
无锡固电 - ISC		晶体晶体管局域网
页数	文件大小	规格书
2页	215K
描述
isc Silicon PNP Darlington Power Transistor

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MJ900 数据手册

INCHANGE Semiconductor

isc Product Specification

isc Silicon PNP Darlington Power Transistor

MJ900

DESCRIPTION

·Collector-Emitter Breakdown Voltage-

: V_(BR)CEO=-60V(Min.)

·High DC Current Gain-

: h_FE= 1000(Min.)@I_C=-3A

·Low Collector Saturation Voltage-

: V_{CE (sat)}=-2.0V(Max.)@ I_C=-3A

APPLICATIONS

·Designed for use as output devices in complementary

general purpose amplifier applications.

ABSOLUTE MAXIMUM RATINGS (T_a=25℃)

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

VALUE

-60

UNIT

-60

-5

Collector Current-Continunous

Base Current-Continunous

-8

I_B

-0.1

Collector Power Dissipation

@T_C=25℃

P_C

℃

T_j

Junction Temperature

200

T_stg

Storage Temperature Range

-55~+200

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Thermal Resistance, Junction to Case

1.94

℃/W

R_{th j-c}

isc Website：www.iscsemi.cn

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