Datasheet > MJ3040

MJ3040

更新时间： 2025-07-25 10:55:55

品牌	Logo	应用领域
无锡固电 - ISC		晶体晶体管
页数	文件大小	规格书
2页	62K
描述
isc Silicon NPN Darlingtion Power Transistor

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中文翻译

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技术参数
数据手册

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MJ3040 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.6
Base Number Matches：	1

MJ3040 数据手册

INCHANGE Semiconductor

isc Product Specification

isc Silicon NPN Darlingtion Power Transistor

MJ3040

DESCRIPTION

·Built-in Base-Emitter Shunt Resistors

·High DC current gain-

_FE= 100 (Min) @ I_C=2.5A

·Collector-Emitter Sustaining Voltage-

_CEO(SUS)=300V(Min)

APPLICATIONS

·Developed for line operated amplifier, series pass and

Switching regulator applications.

ABSOLUTE MAXIMUM RATINGS(T_C=25℃)

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

Collector-Base Voltage

VALUE

400

UNIT

Collector-Emitter Voltage

Emitter-Base Voltage

300

Collector Current -Continuous

Collector Power Dissipation@T_C=25℃

Junction Temperature

P_C

175

℃

200

T_J

Storage Temperature

-55~200

T_stg

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Thermal Resistance, Junction to Case

1.0

℃/W

R_{th j-c}

isc Website：www.iscsemi.cn

中文翻译

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