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MIC2010-1PCQS PDF预览

MIC2010-1PCQS

更新时间: 2024-02-01 14:11:26
品牌 Logo 应用领域
麦瑞 - MICREL 电源电路电源管理电路光电二极管控制器
页数 文件大小 规格书
13页 1014K
描述
USB Power Controller

MIC2010-1PCQS 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:SSOP,Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8542.39.00.01
风险等级:5.7可调阈值:YES
模拟集成电路 - 其他类型:POWER SUPPLY SUPPORT CIRCUITJESD-30 代码:R-PDSO-G16
JESD-609代码:e3长度:4.89 mm
湿度敏感等级:1信道数量:2
功能数量:1端子数量:16
最高工作温度:70 °C最低工作温度:
封装主体材料:PLASTIC/EPOXY封装代码:SSOP
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, SHRINK PITCH
峰值回流温度(摄氏度):260认证状态:Not Qualified
座面最大高度:1.75 mm最大供电电压 (Vsup):5.5 V
最小供电电压 (Vsup):4.5 V标称供电电压 (Vsup):5 V
表面贴装:YES温度等级:COMMERCIAL
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子节距:0.635 mm端子位置:DUAL
处于峰值回流温度下的最长时间:40宽度:3.9 mm
Base Number Matches:1

MIC2010-1PCQS 数据手册

 浏览型号MIC2010-1PCQS的Datasheet PDF文件第4页浏览型号MIC2010-1PCQS的Datasheet PDF文件第5页浏览型号MIC2010-1PCQS的Datasheet PDF文件第6页浏览型号MIC2010-1PCQS的Datasheet PDF文件第8页浏览型号MIC2010-1PCQS的Datasheet PDF文件第9页浏览型号MIC2010-1PCQS的Datasheet PDF文件第10页 
MIC2010/2070  
Micrel  
Functional Diagram  
MAIN  
Current  
Limit  
MAIN  
FET  
Charge Pump  
+
Gate Control  
EN  
OUT  
AUX  
AUX  
FET  
S3#  
Current  
Limit  
RSET  
Thermal  
Sense  
AUX  
*
* 'P' options only  
10ms  
Timer  
Latch  
/FAULT  
*MIC2070-1/2 Only  
To Other Channel  
TJ = P × θ + T  
A
where:  
Functional Description  
D
JA  
The MIC2010/2070 are designed to support the power distri-  
butionrequirementsforUSBwakeupfromtheACPIS3state.  
It integrates two independent channels under control of input  
S3#.WhenS3#isassertedLOW(ACPIS3state)theMIC2010/  
2070 will switch a 500mMOSFET switch from the AUX  
input to each of its two outputs. In addition the current-limit  
threshold will be set to a value specified by a resistor  
connected to the RSET inputs. Conversely when the S3#  
inputisHIGHtheMIC2010/2070willswitcha100mMOSFET  
switch from the MAIN inputs to each of its two outputs. The  
current-limit threshold is preset to 500mA in this state. The  
lower current limit during the ACPI S3 state helps to ensure  
thatthestandbysupplymaintainsregulationevenduringfault  
conditions.  
T = junction temperature  
J
T = ambient temperature  
A
θ
= is the thermal resistance of the package  
JA  
Current Sensing and Limiting  
The current-limit threshold of each channel is preset inter-  
nally at 500mA when S3# is deasserted. When S3# is  
asserted the current-limit threshold is specified by a resistor  
connected to the RSET input. The value of the current-limit  
thresholdisdeterminedbytheequation18/R  
ohmswhere  
SET  
R
is the resistance connected between the RSET pin and  
ground. The current-limit threshold should be set at 1.2X of  
the applications continous output current requirement.  
SET  
When an overcurrent condition lasts longer than t  
the  
Thermal Shutdown  
DLY  
MIC2070 will activate an internal circuit breaker that will latch  
the output off and assert FAULT. The output will remain off  
until either the load is removed or EN is toggled. When the  
MIC2070 enters a latched output condition a 1mA pull-up  
current source is activated. This provides a way to automati-  
cally reset the output once the load is removed without the  
need to toggle the enable input. Please refer to Figure 7 for  
timing details.  
Thermal shutdown is employed to protect the device from  
damage should the die temperature exceed safe margins  
due mainly to short circuit faults. Thermal shutdown shuts off  
the output MOSFET and asserts the FAULT output if the die  
temperaturereaches140°Candtheoverheatedchannelisin  
currentlimit.Theotherchannelisnotaffected.Ifhowever,the  
die temperature exceeds 160°C, both channels will be shut  
off even if neither channel is in current limit.  
The MIC2010 will automatically reset its output when the die  
temperature cools down to 120°C. The MIC2010 output and  
FAULT signal will continue to cycle on and off until the device  
is disabled or the fault is removed. Figure 6 depicts typical  
timing. Depending on PCB layout, package, ambient tem-  
perature, etc., it may take several hundred milliseconds from  
the incidence of the fault to the output MOSFET being shut  
Power Dissipation  
The device’s junction temperature depends on several fac-  
tors such as the load, PCB layout, ambient temperature and  
package type. The power dissipated in each channel is  
2
P =R  
×I  
whereR  
istheon-resistanceofthe  
DS(on)  
D
DS(on) OUT  
internal MOSFETs and I  
is the continuous output current.  
OUT  
Total power dissipation of the device will be the summation of  
P for both channels. To relate this to junction temperature,  
D
the following equation can be used:  
January 2005  
7
M9999-101104  

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