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MH16M40AJD-6 PDF预览

MH16M40AJD-6

更新时间: 2024-01-09 01:33:41
品牌 Logo 应用领域
三菱 - MITSUBISHI /
页数 文件大小 规格书
17页 192K
描述
FAST PAGE MODE ( 16,777,216-WORD BY 40-BIT ) DYNAMIC RAM

MH16M40AJD-6 数据手册

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MITSUBISHI LSIs  
Preliminary Spec.  
Preliminary Spec.  
Some of contents are subject to change without notice.  
MH16M40AJD -6  
Proto-2  
FAST PAGE MODE ( 16,777,216-WORD BY 40-BIT ) DYNAMIC RAM  
PIN CONFIGURATION ( TOP VIEW )  
DESCRIPTION  
The MH16M40AJD is a 16M word by 40-bit dynamic  
RAM module and consists of 10 industry standard  
16M X 4 dynamic RAMs in a TSOP package.  
The ICs are mounted on both sides of two small PC  
boards (Ceracom) with the flash gold plating and form  
a convenient 69-pin WDIP package.  
69 Key Pin  
68 Vss  
DQ1  
DQ2  
DQ3  
DQ4  
DQ5  
DQ6  
Vss  
1
2
3
4
5
6
7
8
9
67 DQ40  
66 DQ39  
65 DQ38  
64 DQ37  
63 DQ36  
62 Vcc  
FEATURES  
RAS  
access access access  
time time time  
CAS  
Address  
OE  
Cycle  
time  
Power  
dissipa-  
tion  
access  
Type name  
time  
61 DQ35  
60 DQ34  
59 DQ33  
58 DQ32  
57 DQ31  
56 DQ30  
55 DQ29  
54 Vss  
DQ7  
DQ8  
(max.ns) (max.ns) (max.ns) (max.ns)  
(min.ns) (typ.mW)  
60  
15  
30  
15  
110 2500  
MH16M40AJD-6  
DQ9 10  
DQ10 11  
DQ11 12  
Utilizes industry standard 16M X 4 DRAMs in TSOP package  
Low stand-by power dissipation  
13mW (Max) ............................ CMOS lnput level  
Low operating power dissipation  
DQ12 13  
DQ13 14  
Vcc 15  
MH16M40AJD - 6 ........................ 3242 mW (Max)  
Fast-page mode , Read-modify-write,RAS-only refresh  
CAS before RAS refresh, Hidden refresh capabilities  
Early-write mode and OE to control output buffer impedance  
All inputs, output TTL compatible and low capacitance  
4096 refresh cycles every 64ms (A0 - A12) (CbR only)  
Includes (0.22uF x 12) decoupling capacitors  
5.0V ± 5% Vcc  
3.3V Vdd by onboard mounted regulators  
TTL input converted to LVTTL by onboard mounted level  
shifters.  
53 DQ28  
52 NC  
DQ14 16  
/CAS0 17  
51 NC  
/RAS0 18  
DQ15 19  
DQ16 20  
DQ17 21  
/W0 22  
NC 23  
DQ18 24  
DQ19 25  
Vss 26  
50 DQ27  
49 DQ26  
48 DQ25  
47 /OE0  
46 NC  
45 DQ24  
44 DQ23  
43 Vcc  
42 DQ22  
41 DQ21  
40 A12  
DQ20 27  
A0 28  
APPLICATION  
A1 29  
Main memory unit for computers, Microcomputer memory,  
Refresh memory for CRT  
39 A11  
A2 30  
PIN DESCRIPTION  
38 A10  
A3 31  
37 A9  
A4 32  
A5 33  
A6 34  
Pin Name Function  
36 A8  
Address Inputs  
A0-A12  
35 A7  
Data Inputs / Outputs  
Row Address Strobe Input  
Column Address Strobe Input  
Write Control Input  
Output Enable Input  
Power Supply (+5V)  
Ground (0V)  
DQ1-DQ40  
RAS 0  
CAS 0  
W 0  
OE 0  
Vcc  
Vss  
MIT - DS - 0069 -1.1  
31/ Jan./1997  
MITSUBISHI  
ELECTRIC  
1
( / 17 )  

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