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MGP7N60ED PDF预览

MGP7N60ED

更新时间： 2024-02-23 10:39:40
品牌 Logo 应用领域
安森美 - ONSEMI 晶体二极管晶体管开关电动机控制双极性晶体管栅局域网超快软恢复二极管快速软恢复二极管
页数 文件大小 规格书
6页 147K
描述
Insulated Gate Bipolar Transistor withr Anti-Parallel Diode

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MGP7N60ED 技术参数

是否Rohs认证： 不符合生命周期：Obsolete
包装说明：FLANGE MOUNT, R-PSFM-T3Reach Compliance Code：not_compliant
ECCN代码：EAR99Factory Lead Time：1 week
风险等级：5.09Is Samacsys：N
其他特性：HIGH SPEED SWITCHING, ULTRA FAST SOFT RECOVERY外壳连接：COLLECTOR
最大集电极电流 (IC)：10 A集电极-发射极最大电压：600 V
配置：SINGLE WITH BUILT-IN DIODE门极发射器阈值电压最大值：8 V
门极-发射极最大电压：20 VJEDEC-95代码：TO-220AB
JESD-30 代码：R-PSFM-T3JESD-609代码：e0
元件数量：1端子数量：3
最高工作温度：150 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：FLANGE MOUNT
峰值回流温度（摄氏度）：NOT SPECIFIED极性/信道类型：N-CHANNEL
最大功率耗散 (Abs)：81 W认证状态：Not Qualified
子类别：Insulated Gate BIP Transistors表面贴装：NO
端子面层：Tin/Lead (Sn/Pb)端子形式：THROUGH-HOLE
端子位置：SINGLE处于峰值回流温度下的最长时间：NOT SPECIFIED
晶体管应用：MOTOR CONTROL晶体管元件材料：SILICON
标称断开时间 (toff)：415 ns标称接通时间 (ton)：55 ns
Base Number Matches：1

MGP7N60ED 数据手册

 浏览型号MGP7N60ED的Datasheet PDF文件第2页浏览型号MGP7N60ED的Datasheet PDF文件第3页浏览型号MGP7N60ED的Datasheet PDF文件第4页浏览型号MGP7N60ED的Datasheet PDF文件第5页浏览型号MGP7N60ED的Datasheet PDF文件第6页 
Order this document  
by MGP7N60ED/D  
SEMICONDUCTOR TECHNICAL DATA  
N–Channel Enhancement–Mode Silicon Gate  
IGBT & DIODE IN TO–220  
7.0 A @ 90°C  
10 A @ 25°C  
600 VOLTS  
SHORT CIRCUIT RATED  
LOW ON–VOLTAGE  
This Insulated Gate Bipolar Transistor (IGBT) is co–packaged  
with a soft recovery ultra–fast rectifier and uses an advanced  
termination scheme to provide an enhanced and reliable high  
voltage–blocking capability. Its new 600 V IGBT technology is  
specifically suited for applications requiring both a high tempera-  
ture short circuit capability and a low V  
. It also provides fast  
CE(on)  
switching characteristics and results in efficient operation at high  
frequencies. Co–packaged IGBTs save space, reduce assembly  
time and cost. This new E–series introduces an energy efficient,  
ESD protected, and short circuit rugged device.  
•
•
•
•
•
Industry Standard TO–220 Package  
C
High Speed: E = 70 J/A typical at 125°C  
off  
High Voltage Short Circuit Capability – 10 s minimum at 125°C, 400 V  
Low On–Voltage 2.0 V typical at 5.0 A, 125°C  
Soft Recovery Free Wheeling Diode  
G
C
E
is Included in the Package  
Robust High Voltage Termination  
ESD Protection Gate–Emitter Zener Diodes  
G
•
•
CASE 221A–09  
STYLE 9  
TO–220AB  
E
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
Rating  
Symbol  
Value  
600  
Unit  
Vdc  
Vdc  
Vdc  
Adc  
Collector–Emitter Voltage  
V
CES  
Collector–Gate Voltage (R  
GE  
= 1.0 MΩ)  
V
CGR  
600  
Gate–Emitter Voltage — Continuous  
V
GE  
± 20  
Collector Current — Continuous @ T = 25°C  
I
I
I
10  
7.0  
14  
C
C
C25  
C90  
CM  
— Continuous @ T = 90°C  
— Repetitive Pulsed Current (1)  
Apk  
Total Power Dissipation @ T = 25°C  
Derate above 25°C  
P
D
81  
0.65  
Watts  
W/°C  
C
Operating and Storage Junction Temperature Range  
Short Circuit Withstand Time  
T , T  
stg  
–55 to 150  
10  
°C  
J
t
sc  
s
(V  
CC  
= 400 Vdc, V  
= 15 Vdc, T = 125°C, R = 20 Ω)  
GE J G  
Thermal Resistance — Junction to Case – IGBT  
— Junction to Case – Diode  
R
R
R
1.5  
2.7  
65  
°C/W  
°C  
θJC  
θJC  
θJA  
— Junction to Ambient  
Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 5 seconds  
Mounting Torque, 6–32 or M3 screw  
T
260  
L
10 lbf in (1.13 N m)  
(1) Pulse width is limited by maximum junction temperature. Repetitive rating.  
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit  
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.  
Designer’s is a trademark of Motorola, Inc.  
REV 1  
Motorola, Inc. 1998  
123456

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