Datasheet > MGPN0515-C12

MGPN0515-C12

更新时间： 2023-12-06 20:01:58

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3页	491K
描述
MGPN Series GaAs PIN Diodes

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MGPN0515-C12 数据手册

MGPN Series

GaAs PIN Diodes

Rev. V1

Features



Nanosecond Switching Speed with Low-Cost

TTL Logic



Low Series Resistance

No Reverse Bias Required for Low Loss

RoHS* Compliant

Description

The MGPN GaAs PIN Diodes are a series of GaAs

PIN diodes suitable for high frequency, >26 GHz,

switch and high speed modulation applications.

Electrical Characteristics, T_C= +25°C

Parameters

Units

V_BR

V_F

C_J

R_S

T_L

Ohms

I_R= 10 µA

I_F= 10 mA V_R= 10 V, F = 1 MHz I_F= 20 mA, F = 1 GHz I_F= 10 mA I_R= 6 mA

Test Condition

Min.

Typ.

Max.

Typ.

Max.

Typ.

Max.

MGPN0515-C12

MGPN0518-C12

MGPN1506-C12

MGPN1504-C01A

MGPN1503-C01A

1300

0.13

0.15

0.85

1.0

1300

1350

0.16

0.05

0.18

0.06

0.04

0.03

0.75

1.6

1.0

2.0

3.0

150

205

0.036

0.027

2.0

Absolute Maximum Ratings

Rating

Limits

V_R

I_F

Vbr

150 mA

Ɵ_JC

225°C/W

400 mW

de-rated to zero at 150°C

P_DISS

T_J

175°C

T_STG

T_{die attach}

-65°C to +200°C

<320°C per 5 sec

Electrostatic Discharge (ESD)

Class 0 (Human Body Model)

* Restrictions on Hazardous Substances, European Union Directive 2011/65/EU.

M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.

Visit www.macom.com for additional data sheets and product information.

For further information and support please visit:

https://www.macom.com/support

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