Datasheet > MG6303WZ

MG6303WZ

更新时间： 2024-10-02 20:08:19

品牌	Logo	应用领域
罗姆 - ROHM		双极性晶体管
页数	文件大小	规格书
4页	240K
描述
IGBT,

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中文翻译

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技术参数
数据手册

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MG6303WZ 技术参数

是否Rohs认证：	符合	生命周期：	Active
Reach Compliance Code：	compliant	风险等级：	5.73
峰值回流温度（摄氏度）：	NOT SPECIFIED	处于峰值回流温度下的最长时间：	NOT SPECIFIED
Base Number Matches：	1

MG6303WZ 数据手册

MG6303WZ

650V 30A Insulated Gate Bipolar Transistor

Datasheet

lOutline

Wafer

V_CES

I_{C (Nominal)}

650V

30A

V_{CE(sat) (Typ.)}

1.5V

Max. Possible Chips per Wafer

1137pcs

lFeatures

lInner Circuit

1) Trench Light Punch Through Type

2) Low Collector - Emitter Saturation Voltage

3) High Speed Switching

(2)

(3)

(1) Gate

(2) Collector

(3) Emitter

(1)

4) Low Switching Loss & Soft Switching

lApplication

PFC

UPS

Welding

Solar Inverter

lAbsolute Maximum Ratings

Parameter

Symbol

Value

650

Unit

Collector - Emitter Voltage, T_j= 25°C

Gate - Emitter Voltage

V_CES

V_GES

±30

*1)

Collector Current

I_C

Pulsed Collector Current

120

I_CP

T_j

Operating Junction Temperature

*1 Depending on thermal properties of assembly

*2 Pulse width limited by T_jmax.

-40 to +175

°C

www.rohm.com

2019.08 - Rev.A

1/3

12 3 4

中文翻译

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