Datasheet > MG6308WZ

MG6308WZ

更新时间： 2024-10-03 11:15:07

品牌	Logo	应用领域
罗姆 - ROHM		功率因数校正
页数	文件大小	规格书
4页	240K
描述
Application: Solar Inverter, IH, PFC, UPS, Welding For sale of Bare Die, please contact the specifications in our sales office. Currently, we don't sell Bare Die on the internet distributors now.

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MG6308WZ 数据手册

MG6308WZ

650V 75A Insulated Gate Bipolar Transistor

Datasheet

lOutline

Wafer

V_CES

I_{C (Nominal)}

650V

75A

V_{CE(sat) (Typ.)}

1.5V

Max. Possible Chips per Wafer

512pcs

lFeatures

lInner Circuit

1) Trench Light Punch Through Type

2) Low Collector - Emitter Saturation Voltage

3) High Speed Switching

(2)

(3)

(1) Gate

(2) Collector

(3) Emitter

(1)

4) Low Switching Loss & Soft Switching

lApplication

PFC

UPS

Welding

Solar Inverter

lAbsolute Maximum Ratings

Parameter

Symbol

Value

650

Unit

Collector - Emitter Voltage, T_j= 25°C

Gate - Emitter Voltage

V_CES

V_GES

±30

*1)

Collector Current

I_C

Pulsed Collector Current

300

I_CP

T_j

Operating Junction Temperature

*1 Depending on thermal properties of assembly

*2 Pulse width limited by T_jmax.

-40 to +175

°C

www.rohm.com

2019.08 - Rev.A

1/3

12 3 4

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