Datasheet > MDQ10N026TH

MDQ10N026TH

更新时间： 2024-10-02 17:15:35

品牌	Logo	应用领域
美格纳 - MGCHIP		/
页数	文件大小	规格书
6页	1128K
描述
PackageTO-247

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中文翻译

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技术参数
数据手册

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MDQ10N026TH 技术参数

是否Rohs认证：	符合	生命周期：	Active
Reach Compliance Code：	unknown	风险等级：	5.76
Base Number Matches：	1

MDQ10N026TH 数据手册

MDQ10N026TH

Single N-channel Trench MOSFET 100V, 160A, 2.6mΩ

General Description

Features

The MDQ10N026TH uses advanced Magnachip’s MOSFET

Technology, which provides high performance in on-state resistance,

fast switching performance, and excellent quality.



V_DS= 100V

I_D= 160A @V_GS= 10V

Very low on-resistance R_DS(ON)

< 2.6 mΩ @V_GS= 10V

100% UIL Tested

These devices can also be utilized in industrial applications

such as Low Power Drives of E-Vehicles(E-bike), DC/DC converter,

and general purpose applications.



100% Rg Tested

TO-247

Absolute Maximum Ratings (T_J= 25 ^oC)

Characteristics

Drain-Source Voltage

Symbol

Rating

100

Unit

V_DSS

V_GSS

Gate-Source Voltage

±20

T_C=25^oC (Silicon Limited)

300

Continuous Drain Current ⁽¹⁾

I_D

T_C=25^oC (Package Limited)

T_C=100^oC (Silicon Limited)

160

212

Pulsed Drain Current ⁽²⁾

Power Dissipation

I_DM

640

T_C=25^oC

468

P_D

T_C=100^oC

234

Single Pulse Avalanche Energy ⁽³⁾

E_AS

544

^oC

Junction and Storage Temperature Range

T_J, T_stg

-55~175

Thermal Characteristics

Characteristics

Thermal Resistance, Junction-to-Ambient

Thermal Resistance, Junction-to-Case

Symbol

R_θJA

Rating

Unit

^oC/W

R_θJC

0.32

Jul. 2021. Version 1.3

Magnachip Semiconductor Ltd.

12 3 4 5 6

中文翻译

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