Datasheet > MDQ18N50GTH

MDQ18N50GTH

更新时间： 2024-10-04 01:11:03

品牌	Logo	应用领域
美格纳 - MGCHIP		/
页数	文件大小	规格书
6页	975K
描述
N-Channel MOSFET 500V, 20.0A, 0.27(ohm)

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MDQ18N50GTH 数据手册

MDQ18N50G

N-Channel MOSFET 500V, 20.0A, 0.27Ω

General Description

Features



 I_D

 R_DS(ON)≤ 0.27Ω

V_DS

= 500V

= 20.0A

These N-channel MOSFET are produced using advanced

MagnaChip’s MOSFET Technology, which provides low on-

state resistance, high switching performance and excellent

quality.

@ V_GS= 10V

Applications

These devices are suitable device for SMPS, high Speed

switching and general purpose applications.



Power Supply

 HID

 Lighting

TO-247

Absolute Maximum Ratings (Ta = 25^oC)

Characteristics

Drain-Source Voltage

Symbol

V_DSS

Rating

500

Unit

Gate-Source Voltage

V_GSS

±30

T_C=25^oC

T_C=100^oC

Continuous Drain Current

Pulsed Drain Current⁽¹⁾

Power Dissipation

I_D

12.5

I_DM

P_D

T_C=25^oC

Derate above 25 ^oC

245

1.96

24.5

4.5

W/^oC

V/ns

^oC

Repetitive Avalanche Energy⁽¹⁾

Peak Diode Recovery dv/dt⁽³⁾

Single Pulse Avalanche Energy⁽⁴⁾

E_AR

dv/dt

E_AS

950

Junction and Storage Temperature Range

* I_Dlimited by maximum junction temperature

T_J, T_stg

-55~150

Thermal Characteristics

Characteristics

Thermal Resistance, Junction-to-Ambient⁽¹⁾

Thermal Resistance, Junction-to-Case⁽¹⁾

Symbol

R_θJA

Rating

Unit

^oC/W

R_θJC

0.51

Jun. 2011. Ver 1.2

MagnaChip Semiconductor Ltd.

12 3 4 5 6

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