Datasheet > MDQ14N049TH

MDQ14N049TH

更新时间： 2024-05-23 22:23:49

品牌	Logo	应用领域
美格纳 - MGCHIP		/
页数	文件大小	规格书
6页	1260K
描述
PackageTO-247

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MDQ14N049TH 数据手册

MDQ14N049TH

Single N-channel Trench MOSFET 135V, 160A, 4.9mΩ

General Description

Features

The MDQ14N049TH, Magnachip’s latest generation of MV MOSFET

Technology, which provides high performance in the lowest Rds(on),

fast switching performance, and excellent quality.



V_DS= 135V

I_D= 160A @V_GS= 10V

Very low on-resistance R_DS(ON)

< 4.9 mΩ @V_GS= 10V

175^oC operating temperature

100% UIL Tested

These devices can also be utilized in industrial applications such as

Low Power Drives of E-bike, Light electric vehicles, DC/DC

converter, and general purpose applications.



100% Rg Tested

100% △VDS Tested

TO-247

Absolute Maximum Ratings (T_J= 25 ^oC)

Characteristics

Drain-Source Voltage

Symbol

Rating

Unit

V_DSS

V_GSS

135

±20

Gate-Source Voltage

T_C=25^oC (Silicon Limited)

195

Continuous Drain Current ⁽¹⁾

I_D

T_C=100^oC (Silicon Limited)

T_C=25^oC (Package Limited)

138

160

Pulsed Drain Current ⁽²⁾

Power Dissipation

I_DM

640

T_C=25^oC

375

P_D

T_C=100^oC

187

Single Pulse Avalanche Energy ⁽³⁾

E_AS

450

^oC

Junction and Storage Temperature Range

T_J, T_stg

-55~175

Thermal Characteristics

Characteristics

Thermal Resistance, Junction-to-Ambient ⁽¹⁾

Thermal Resistance, Junction-to-Case

Symbol

R_θJA

Rating

Unit

^oC/W

R_θJC

0.4

Jul. 2021. Version 1.3

Magnachip Semiconductor Ltd.

12 3 4 5 6

中文翻译

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