Datasheet > MD51V65805-50TA

MD51V65805-50TA

更新时间： 2024-02-13 13:39:23

品牌	Logo	应用领域
冲电气 - OKI		动态存储器光电二极管
页数	文件大小	规格书
15页	312K
描述
Fast Page DRAM, 8MX8, 50ns, CMOS, PDSO32, 0.400 INCH, 1.27 MM PITCH, PLASTIC, TSOP2-32

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MD51V65805-50TA 数据手册

¡ Semiconductor

MD51V65805

AC Characteristics (2/2)

(V_CC= 3.3 V ±0.3 V, Ta = 0°C to 70°C) Note 1, 2, 3

MD51V65805

-50

MD51V65805

-60

Parameter

Symbol

Unit Note

Min.

Max.

Min.

Max.

Read Command Set-up Time

t_RCS

—

Read Command Hold Time

Read Command Hold Time referenced to RAS

t_RCH

t_RRH

t_WCS

t_WCH

—

Write Command Set-up Time

Write Command Hold Time

—

Write Command Pulse Width

WE Pulse Width (DQ Disable)

OE Command Hold Time

t_WP

t_WPE

t_OEH

t_OEP

t_OCH

t_RWL

t_CWL

—

OE Precharge Time

OE Command Hold Time

Write Command to RAS Lead Time

Write Command to CAS Lead Time

Data-in Set-up Time

t_DS

t_DH

—

Data-in Hold Time

OE to Data-in Delay Time

CAS to WE Delay Time

Column Address to WE Delay Time

RAS to WE Delay Time

t_OED

t_CWD

t_AWD

t_RWD

t_CPWD

t_RPC

CAS Precharge WE Delay Time

CAS Active Delay Time from RAS Precharge

RAS to CAS Set-up Time (CAS before RAS) t_CSR

RAS to CAS Hold Time (CAS before RAS) t_CHR

WE to RAS Precharge Time (CAS before RAS) t_WRP

WE Hold Time from RAS (CAS before RAS) t_WRH

7/15

1...4 5 678 9 10...15

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