MCU01N60A
Electrical Characteristics @ 25°C (Unless Otherwise Specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Static Characteristics
V(BR)DSS VGS=0V, ID=250µA
Drain-Source Breakdown Voltage
Gate-Source Leakage Current
Zero Gate Voltage Drain Current
Gate-Threshold Voltage
600
V
nA
µA
V
IGSS
IDSS
VGS =±30V
±100
1
VDS=600V, VGS=0V
VDS=VGS, ID=250µA
VGS=10V, ID=0.5A
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VGS(th)
RDS(on)
5J
3.4
7.0
3.2
3.0
4.2
9.0
Ω
Drain-Source On-Resistance
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Diode Characteristics
IS
VSD
trr
Continuous Body Diode Current
Diode Forward Voltage
1.3
1.4
A
V
VGS=0V, IS=0.5A
490
290
Reverse Recovery Time
Reverse Recovery Charge
ns
nC
VDD=300V,IS=0.5A,di/dt=10A/μs
Qrr
Dynamic Characteristics
Ciss
Coss
Crss
Qg
Input Capacitance
125
21.3
4.1
VDS=20V,VGS=0V,f=1MHz
VDD=300V,VGS=10V,ID=0.5A
pF
nC
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
6.0
Qgs
Qgd
td(on)
tr
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
0.9
3.1
4.9
7.5
VDD=300V, RG=6Ω,
ID=0.5A
ns
td(off)
tf
12.7
63.9
Rev.4-1-01182023
2/6
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