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MCP6004T-I/P PDF预览

MCP6004T-I/P

更新时间: 2024-02-28 17:30:12
品牌 Logo 应用领域
美国微芯 - MICROCHIP 运算放大器放大器电路光电二极管
页数 文件大小 规格书
28页 455K
描述
1 MHz, Low-Power Op Amp

MCP6004T-I/P 技术参数

生命周期:Active包装说明:SOP,
Reach Compliance Code:compliant风险等级:5.59
放大器类型:OPERATIONAL AMPLIFIER标称共模抑制比:76 dB
最大输入失调电压:4500 µVJESD-30 代码:R-PDSO-G8
长度:4.9 mm功能数量:1
端子数量:8最高工作温度:85 °C
最低工作温度:-40 °C封装主体材料:PLASTIC/EPOXY
封装代码:SOP封装形状:RECTANGULAR
封装形式:SMALL OUTLINE座面最大高度:1.75 mm
标称压摆率:0.6 V/us子类别:Operational Amplifier
供电电压上限:7 V标称供电电压 (Vsup):5 V
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子形式:GULL WING
端子节距:1.27 mm端子位置:DUAL
标称均一增益带宽:1000 kHz宽度:3.9 mm
Base Number Matches:1

MCP6004T-I/P 数据手册

 浏览型号MCP6004T-I/P的Datasheet PDF文件第1页浏览型号MCP6004T-I/P的Datasheet PDF文件第2页浏览型号MCP6004T-I/P的Datasheet PDF文件第4页浏览型号MCP6004T-I/P的Datasheet PDF文件第5页浏览型号MCP6004T-I/P的Datasheet PDF文件第6页浏览型号MCP6004T-I/P的Datasheet PDF文件第7页 
MCP6001/2/4  
AC ELECTRICAL SPECIFICATIONS  
Electrical Characteristics: Unless otherwise indicated, TA = +25°C, VDD = +1.8 to 5.5V, VSS = GND, VCM = VDD/2,  
VOUT VDD/2, RL = 10 kΩ to VDD/2 and CL = 60 pF.  
Parameters  
Sym  
Min  
Typ  
Max  
Units  
Conditions  
AC Response  
Gain Bandwidth Product  
Phase Margin  
GBWP  
PM  
1.0  
90  
MHz  
°
G = +1  
Slew Rate  
SR  
0.6  
V/µs  
Noise  
Input Noise Voltage  
Input Noise Voltage Density  
Input Noise Current Density  
Eni  
eni  
ini  
6.1  
28  
µVp-p f = 0.1 Hz to 10 Hz  
nV/Hz f = 1 kHz  
fA/Hz f = 1 kHz  
0.6  
TEMPERATURE SPECIFICATIONS  
Electrical Characteristics: Unless otherwise indicated, VDD = +1.8V to +5.5V and VSS = GND.  
Parameters  
Temperature Ranges  
Sym  
Min  
Typ  
Max  
Units  
Conditions  
Industrial Temperature Range  
Extended Temperature Range  
Operating Temperature Range  
Storage Temperature Range  
TA  
TA  
TA  
TA  
-40  
-40  
-40  
-65  
+85  
°C  
°C  
°C  
°C  
+125  
+125  
+150  
Note  
Thermal Package Resistances  
Thermal Resistance, 5L-SC70  
Thermal Resistance, 5L-SOT-23  
Thermal Resistance, 8L-PDIP  
Thermal Resistance, 8L-SOIC (150 mil)  
Thermal Resistance, 8L-MSOP  
Thermal Resistance, 14L-PDIP  
Thermal Resistance, 14L-SOIC  
Thermal Resistance, 14L-TSSOP  
θJA  
θJA  
θJA  
θJA  
θJA  
θJA  
θJA  
θJA  
331  
256  
85  
°C/W  
°C/W  
°C/W  
°C/W  
°C/W  
°C/W  
°C/W  
°C/W  
163  
206  
70  
120  
100  
Note:  
The industrial temperature devices operate over this extended temperature range, but with reduced  
performance. In any case, the internal Junction Temperature (TJ) must not exceed the Absolute Maximum  
specification of +150°C.  
© 2005 Microchip Technology Inc.  
DS21733F-page 3  

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