Datasheet > MCM69P618C

MCM69P618C

更新时间： 2024-01-29 04:25:26

品牌	Logo	应用领域
摩托罗拉 - MOTOROLA		/
页数	文件大小	规格书
12页	209K
描述
64K x 18 Bit Pipelined BurstRAM Synchronous Fast Static RAM

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MCM69P618C 数据手册

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SEMICONDUCTOR TECHNICAL DATA

MCM69P618C

64K x 18 Bit Pipelined BurstRAM

Synchronous Fast Static RAM

The MCM69P618C is a 1M–bit synchronous fast static RAM designed to pro-

vide a burstable, high performance, secondary cache for the 68K Family,

PowerPC , 486, i960 , and Pentium microprocessors. It is organized as 64K

words of 18 bits each. This device integrates input registers, an output register,

a 2–bit address counter, and high speed SRAM onto a single monolithic circuit

for reduced parts count in cache data RAM applications. Synchronous design

allows precise cycle control with the use of an external clock (K). BiCMOS cir-

cuitry reduces the overall power consumption of the integrated functions for

greater reliability.

TQ PACKAGE

TQFP

CASE 983A–01

Addresses (SA), data inputs (DQx), and all control signals except output

enable (G) and Linear Burst Order (LBO) are clock (K) controlled through

positive–edge–triggered noninverting registers.

BurstscanbeinitiatedwitheitherADSPorADSCinputpins. Subsequentburst

addresses can be generated internally by the MCM69P618C (burst sequence

operates in linear or interleaved mode dependent upon the state of LBO) and

controlled by the burst address advance (ADV) input pin.

Write cycles are internally self–timed and initiated by the rising edge of the

clock (K) input. This feature eliminates complex off–chip write pulse generation

and provides increased timing flexibility for incoming signals.

Synchronous byte write (SBx), synchronous global write (SGW), and syn-

chronous write enable SW are provided to allow writes to either individual bytes

or to both bytes. The two bytes are designated as “a” and “b”. SBa controls DQa

and SBb controls DQb. Individual bytes are written if the selected byte writes SBx

are asserted with SW. Both bytes are written if either SGW is asserted or if both

SBx and SW are asserted.

For read cycles, pipelined SRAMs output data is temporarily stored by an

edge–triggeredoutput register and then released to the output buffers at the next

rising edge of clock (K).

The MCM69P618C operates from a single 3.3 V power supply and all inputs

and outputs are LVTTL compatible and 5 V tolerant.

•

MCM69P618C–4 = 4 ns Access / 7.5 ns Cycle

MCM69P618C–4.5 = 4.5 ns Access / 8 ns Cycle

MCM69P618C–5 = 5 ns Access / 10 ns Cycle

MCM69P618C–6 = 6 ns Access / 12 ns Cycle

MCM69P618C–7 = 7 ns Access / 13.3 ns Cycle

Single 3.3 V + 10%, – 5% Power Supply

ADSP, ADSC, and ADV Burst Control Pins

Selectable Burst Sequencing Order (Linear/Interleaved)

Internally Self–Timed Write Cycle

Byte Write and Global Write Control

Single–Cycle Deselect Timing

5 V Tolerant on all Pins (Inputs and I/Os)

100–Pin TQFP Package

•

The PowerPC name is a trademark of IBM Corp., used under license therefrom.

i960 and Pentium are trademarks of Intel Corp.

REV 2

2/16/98

Motorola, Inc. 1998

MOTOROLA FAST SRAM

MCM69P618C

12 3 4 5 6 7...12

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与MCM69P618C相关器件

型号	品牌	获取价格	描述	数据表
MCM69P618CTQ4	MOTOROLA	获取价格	64K x 18 Bit Pipelined BurstRAM Synchronous Fast Static RAM
MCM69P618CTQ4.5	MOTOROLA	获取价格	64K x 18 Bit Pipelined BurstRAM Synchronous Fast Static RAM
MCM69P618CTQ4.5R	MOTOROLA	获取价格	64K x 18 Bit Pipelined BurstRAM Synchronous Fast Static RAM
MCM69P618CTQ4R	MOTOROLA	获取价格	64K x 18 Bit Pipelined BurstRAM Synchronous Fast Static RAM
MCM69P618CTQ5	MOTOROLA	获取价格	64K x 18 Bit Pipelined BurstRAM Synchronous Fast Static RAM
MCM69P618CTQ5R	MOTOROLA	获取价格	64K x 18 Bit Pipelined BurstRAM Synchronous Fast Static RAM
MCM69P618CTQ6	MOTOROLA	获取价格	64K x 18 Bit Pipelined BurstRAM Synchronous Fast Static RAM
MCM69P618CTQ6R	MOTOROLA	获取价格	64K x 18 Bit Pipelined BurstRAM Synchronous Fast Static RAM
MCM69P618CTQ7	MOTOROLA	获取价格	64K x 18 Bit Pipelined BurstRAM Synchronous Fast Static RAM
MCM69P618CTQ7R	MOTOROLA	获取价格	64K x 18 Bit Pipelined BurstRAM Synchronous Fast Static RAM

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