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MC74VHC00MR2 PDF预览

MC74VHC00MR2

更新时间: 2024-10-02 14:22:31
品牌 Logo 应用领域
安森美 - ONSEMI 输入元件光电二极管
页数 文件大小 规格书
7页 132K
描述
AHC/VHC SERIES, QUAD 2-INPUT NAND GATE, PDSO14, EIAJ, SOIC-14

MC74VHC00MR2 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:SOIC包装说明:SOP,
针数:14Reach Compliance Code:compliant
HTS代码:8542.39.00.01风险等级:5.26
系列:AHC/VHCJESD-30 代码:R-PDSO-G14
JESD-609代码:e0长度:10.2 mm
逻辑集成电路类型:NAND GATE功能数量:4
输入次数:2端子数量:14
最高工作温度:85 °C最低工作温度:-40 °C
封装主体材料:PLASTIC/EPOXY封装代码:SOP
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):225传播延迟(tpd):13 ns
认证状态:Not Qualified座面最大高度:2.05 mm
最大供电电压 (Vsup):5.5 V最小供电电压 (Vsup):2 V
标称供电电压 (Vsup):3.3 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子面层:TIN LEAD端子形式:GULL WING
端子节距:1.27 mm端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED宽度:5.275 mm
Base Number Matches:1

MC74VHC00MR2 数据手册

 浏览型号MC74VHC00MR2的Datasheet PDF文件第2页浏览型号MC74VHC00MR2的Datasheet PDF文件第3页浏览型号MC74VHC00MR2的Datasheet PDF文件第4页浏览型号MC74VHC00MR2的Datasheet PDF文件第5页浏览型号MC74VHC00MR2的Datasheet PDF文件第6页浏览型号MC74VHC00MR2的Datasheet PDF文件第7页 
MC74VHC00  
Quad 2-Input NAND Gate  
The MC74VHC00 is an advanced high speed CMOS 2input  
NAND gate fabricated with silicon gate CMOS technology. It  
achieves high speed operation similar to equivalent Bipolar Schottky  
TTL while maintaining CMOS low power dissipation.  
The internal circuit is composed of three stages, including a buffer  
output which provides high noise immunity and stable output. The  
inputs tolerate voltages up to 7 V, allowing the interface of 5 V  
systems to 3 V systems.  
http://onsemi.com  
MARKING  
DIAGRAMS  
14  
1
Features  
VHC00G  
AWLYWW  
High Speed: t = 3.7 ns (Typ) at V = 5 V  
PD  
CC  
SO14  
D SUFFIX  
CASE 751A  
Low Power Dissipation: I = 2 mA (Max) at T = 25°C  
CC  
A
High Noise Immunity: V  
= V  
= 28% V  
NIL CC  
NIH  
Power Down Protection Provided on Inputs  
Balanced Propagation Delays  
14  
Designed for 2 V to 5.5 V Operating Range  
VHC  
00  
Low Noise: V  
= 0.8 V (Max)  
OLP  
TSSOP14  
DT SUFFIX  
CASE 948G  
ALYW G  
Pin and Function Compatible with Other Standard Logic Families  
Latchup Performance Exceeds 300 mA  
G
1
ESD Performance: HBM > 2000 V; Machine Model > 200 V  
Chip Complexity: 32 FETs or 8 Equivalent Gates  
These Devices are PbFree and are RoHS Compliant  
14  
74VHC00  
ALYWG  
EIAJ SO14  
M SUFFIX  
CASE 965  
V
B4  
13  
A4  
12  
Y4  
11  
B3  
10  
A3  
9
Y3  
8
CC  
14  
1
A
= Assembly Location  
= Year  
L, WL = Wafer Lot  
Y
W, WW = Work Week  
G, G  
= PbFree Device  
1
2
3
4
5
6
7
A1  
B1  
Y1  
A2  
B2  
Y2 GND  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 4 of this data sheet.  
Figure 1. Pinout: 14Lead Packages  
(Top View)  
FUNCTION TABLE  
Inputs  
Output  
Y
A
B
L
L
L
H
L
H
H
H
L
H
H
H
© Semiconductor Components Industries, LLC, 2011  
1
Publication Order Number:  
May, 2011 Rev. 6  
MC74VHC00/D  

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