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MC13851

更新时间: 2024-01-26 01:35:35
品牌 Logo 应用领域
飞思卡尔 - FREESCALE 开关放大器
页数 文件大小 规格书
34页 2078K
描述
General Purpose Low Noise Amplifier with Bypass Switch

MC13851 技术参数

是否Rohs认证: 符合生命周期:Transferred
包装说明:2 X 2 MM, 0.60 MM HEIGHT, ROHS COMPLIANT, LEADLESS, PLASTIC, CASE 2128-01, MLPD-8Reach Compliance Code:compliant
风险等级:5.68特性阻抗:50 Ω
构造:COMPONENT增益:14.5 dB
最大输入功率 (CW):10 dBm安装特点:SURFACE MOUNT
功能数量:1端子数量:8
最大工作频率:2500 MHz最小工作频率:1000 MHz
最高工作温度:85 °C最低工作温度:-30 °C
封装主体材料:PLASTIC/EPOXY封装等效代码:SOLCC8,.08,20
电源:2.75 V射频/微波设备类型:WIDE BAND LOW POWER
子类别:RF/Microwave Amplifiers最大压摆率:5.8 mA
表面贴装:YES技术:BICMOS
Base Number Matches:1

MC13851 数据手册

 浏览型号MC13851的Datasheet PDF文件第2页浏览型号MC13851的Datasheet PDF文件第3页浏览型号MC13851的Datasheet PDF文件第4页浏览型号MC13851的Datasheet PDF文件第6页浏览型号MC13851的Datasheet PDF文件第7页浏览型号MC13851的Datasheet PDF文件第8页 
Electrical Specifications  
Table 4. Electrical Characteristics (Vcc = 2.75 V, Ta = 25°C)  
Characteristic  
Symbol  
Min  
Typ  
Max  
Unit  
Associated Gain at Minimum Noise Figure  
R1=1.2 kΩ, Freq=1.575 GHz  
R1=1.2 kΩ, Freq=2.14 GHz  
20.5  
17  
22  
18.6  
22  
Gnf  
dB  
R1=1.5 kΩ, Freq=1.575 GHz  
R1=1.5 kΩ, Freq=2.14 GHz  
20.5  
17.5  
19  
Icc and RF Turn On Time  
Enable trigger total time of 1.8 μsecond from 0 to 2.75 V  
Icc rise time from 0 to 76% of final current level  
Icc rise time from 0 to 87% of final current level  
RF on time from leading edge of enable trigger to RF turn-on  
Note:  
6.4  
9.6  
μs  
1.37  
Maximum Available Gain and Maximum Stable Gain are defined by the K factor as follows:  
MAG = |S21/S12(K ±sqrt(K2-1)) |, if K>1, MSG = |S21/S12|, if K<1  
Table 5 lists the electrical characteristics measured on evaluation boards tuned for typical application  
frequencies when Rbias is 1.2 kΩ. Further details on the application circuits are shown in Section 3,  
“Application Information”  
Table 5. Electrical Characteristics Measured in Frequency Specific Tuned Circuits  
(Vcc = 2.75V, TA = 25°C, Rbias =1.2kΩ unless otherwise noted)  
Characteristic  
1575 MHz (Refer to Figure 7)  
Symbol  
Min  
Typ  
Max  
Unit  
Frequency  
f
G
18.4  
1575  
19.4  
1.28  
-5  
1.6  
5.8  
4.8  
7
MHz  
dB  
Active RF Gain  
Active Noise Figure  
NF  
dB  
Active Input Third Order Intercept Point  
Active Input 1dB Compression Point  
Active Current @ 2.75V, Rbias=1.2kΩ  
Active Current @ 2.75V, Rbias=1.5kΩ  
Active Gain  
IIP3  
P1dBoutput  
Icc  
-6.5  
6.3  
dBm  
dBm  
mA  
mA  
dB  
7.4  
4.8  
3.8  
19  
Icc  
S21  
G
18  
Bypass RF Gain  
-6.5  
-5.5  
6
dB  
Bypass Noise Figure  
NF  
dB  
Bypass Input Third Order Intercept Point  
Bypass Current  
IIP3  
24  
25.5  
4
20  
dBm  
μA  
Bypass Gain  
S21  
-7  
-5.5  
dB  
1960 MHz (Refer to Figure 8)  
Frequency  
f
17.7  
1960  
18.7  
1.37  
-2.7  
8
MHz  
dB  
Active RF Gain  
G
NF  
Active Noise Figure  
1.65  
dB  
Active Input Third Order Intercept Point  
Active Input 1dB Compression Point  
IIP3  
-4  
dBm  
dBm  
P1dBoutput  
6
MC13851 Advance Information, Rev. 2.0  
Freescale Semiconductor  
5

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