Datasheet > MC-424LFG641FA-A70

MC-424LFG641FA-A70

更新时间： 2024-02-08 12:58:08

品牌	Logo	应用领域
日电电子 - NEC		动态存储器内存集成电路
页数	文件大小	规格书
44页	394K
描述
EDO DRAM Module, 4MX64, 70ns, MOS, DIM-168

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技术参数
数据手册

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MC-424LFG641FA-A70 技术参数

生命周期：	Obsolete	Reach Compliance Code：	unknown
风险等级：	5.84

MC-424LFG641FA-A70 数据手册

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MC-424LFG641

Electrical Specifications

• All voltages are referenced to GND.

CC (MIN.)

• After power up (V ≥ V

), wait more than 100 µs (/RAS, /CAS inactive) and then, execute eight /CAS before

/RAS or /RAS only refresh cycles as dummy cycles to initialize internal circuit.

Absolute Maximum Ratings

Parameter

Voltage on any pin relative to GND

Supply voltage

Symbol

V^T

Condition

Rating

−0.5 to +4.6

Unit

V^CC

I^O

Output current

MC-424LFG641F,

MC-424LFG641FA

Power dissipation

P^D

MC-424LFG641FW

°C

Operating ambient temperature

Storage temperature

T^A

0 to +70

−55 to +125

T^stg

Caution Exposing the device to stress above those listed in Absolute Maximum Ratings could cause

permanent damage. The device is not meant to be operated under conditions outside the limits

described in the operational section of this specification. Exposure to Absolute Maximum Rating

conditions for extended periods may affect device reliability.

Recommended Operating Conditions

Parameter

Symbol

V^CC

V^IH

Condition

MIN.

3.0

2.0

−0.3

TYP.

3.3

MAX.

3.6

Unit

Supply voltage

High level input voltage

V^CC+ 0.3

+0.8

Low level input voltage

V^IL

Operating ambient temperature

T^A

°C

1...3 4 567 8 9...44

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